MXLPLAD30KP120AE3/TR datasheet, PDF

MXLPLAD30KP120AE3/TR: DescriptionTrans Voltage Suppressor Diode, 30000W, 120V V(RWM), Unidirectional, 1 Element, Silicon; CategoryDiscrete semiconductor diode; File Size336KB，4 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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MXLPLAD30KP120AE3/TR Overview

Trans Voltage Suppressor Diode, 30000W, 120V V(RWM), Unidirectional, 1 Element, Silicon

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microchip
package instruction	R-PSSO-G1
Reach Compliance Code	compliant
Other features	HIGH RELIABILITY
Maximum breakdown voltage	147 V
Minimum breakdown voltage	133 V
Breakdown voltage nominal value	140 V
Shell connection	CATHODE
Maximum clamping voltage	193 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PSSO-G1
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	30000 W
Number of components	1
Number of terminals	1
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	2.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	120 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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