EEWORLDEEWORLDEEWORLD

Part Number

Search

MT29F1G16ABAHCXXXX:B

Description
Flash, 64MX16, 45ns, PBGA63, 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63
Categorystorage    storage   
File Size2MB,70 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric Compare View All

MT29F1G16ABAHCXXXX:B Overview

Flash, 64MX16, 45ns, PBGA63, 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63

MT29F1G16ABAHCXXXX:B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionVFBGA,
Contacts63
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time45 ns
JESD-30 codeR-PBGA-B63
JESD-609 codee1
length13 mm
memory density1073741824 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals63
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
typeSLC NAND TYPE
width10.5 mm
1Gb: x8, x16 NAND Flash Memory
Features
1Gb NAND Flash Memory
MT29F1GxxABB
Features
• Organization
Page size x8: 2,112 bytes (2,048 + 64 bytes)
Page size x16: 1,056 words (1,024 + 32 words)
Block size: 64 pages (128K + 4K bytes)
Device size: 1Gb: 1,024 blocks
• READ performance
Random READ: 25µs (MAX)
Sequential READ: 50ns (MIN)
• WRITE performance
PROGRAM PAGE: 250µs (TYP)
BLOCK ERASE: 2.0ms (TYP)
• Endurance: 100,000 PROGRAM/ERASE cycles
• Data retention: 10 years
• The first block (block address 00h) is guaranteed to
be valid without ECC (up to 1,000 PROGRAM/
ERASE cycles)
• V
CC
: 1.65–1.95V
• Automated PROGRAM and ERASE
• Basic NAND Flash command set
PAGE READ, RANDOM DATA READ, READ ID,
READ STATUS, PROGRAM PAGE, RANDOM DATA
INPUT, PROGRAM PAGE CACHE MODE, INTER-
NAL DATA MOVE, INTERNAL DATA MOVE with
RANDOM DATA INPUT, BLOCK ERASE, RESET
• New commands
PAGE READ CACHE MODE
READ ID2 (contact factory)
READ UNIQUE ID (contact factory)
Programmable I/O
OTP
BLOCK LOCK
• Operation status byte: Provides a software method
for detecting:
Operation completion
Pass/fail condition
Write-protect status
• Ready/busy# signal (R/B#): Provides a hardware
method of detecting operation completion
• LOCK signal: Protects selectable ranges of blocks
Figure 1:
63-Ball VFBGA x8
• WP# signal: Write-protects the entire device
• Reset required after power-up
Options
1
• Configuration
x8
x16
• Package
63-ball VFBGA
13mm x 10.5mm x 1.0mm
• Operating temperature
Commercial temperature (0 to +70°C)
Extended temperature (–40°C to +85°C)
Notes: 1. For part numbers and device markings, see
Figure 2 on page 2.
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__1.fm - Rev. E 1/08 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

MT29F1G16ABAHCXXXX:B Related Products

MT29F1G16ABAHCXXXX:B MT29F1G08ABAHCXXXXET:B MT29F1G08ABBHCXXXX:B MT29F1G08ABBHCXXXXET:B MT29F1G16ABBHCXXXXET:B MT29F1G08ABBHC-ET:B MT29F1G08ABAHCXXXX:B MT29F1G16ABAHCXXXXET:B MT29F1G16ABBHCXXXX:B
Description Flash, 64MX16, 45ns, PBGA63, 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63 Flash, 128MX8, 45ns, PBGA63, 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63 Flash, 128MX8, 45ns, PBGA63, 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63 Flash, 128MX8, 45ns, PBGA63, 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63 Flash, 64MX16, 45ns, PBGA63, 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63 Flash, 128MX8, 30ns, PBGA63, Flash, 128MX8, 45ns, PBGA63, 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63 Flash, 64MX16, 45ns, PBGA63, 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63 Flash, 64MX16, 45ns, PBGA63, 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to
package instruction VFBGA, VFBGA, 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63 FBGA, BGA63,10X12,32 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63 13 X 10.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-63
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
Maximum access time 45 ns 45 ns 45 ns 45 ns 45 ns 30 ns 45 ns 45 ns 45 ns
JESD-30 code R-PBGA-B63 R-PBGA-B63 R-PBGA-B63 R-PBGA-B63 R-PBGA-B63 R-PBGA-B63 R-PBGA-B63 R-PBGA-B63 R-PBGA-B63
JESD-609 code e1 e1 e1 e1 e1 e3 e1 e1 e1
memory density 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit
Memory IC Type FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH
memory width 16 8 8 8 16 8 8 16 16
Number of terminals 63 63 63 63 63 63 63 63 63
word count 67108864 words 134217728 words 134217728 words 134217728 words 67108864 words 134217728 words 134217728 words 67108864 words 67108864 words
character code 64000000 128000000 128000000 128000000 64000000 128000000 128000000 64000000 64000000
Maximum operating temperature 70 °C 85 °C 70 °C 85 °C 85 °C 85 °C 70 °C 85 °C 70 °C
Minimum operating temperature - -40 °C - -40 °C -40 °C -40 °C - -40 °C -
organize 64MX16 128MX8 128MX8 128MX8 64MX16 128MX8 128MX8 64MX16 64MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code VFBGA VFBGA VFBGA VFBGA VFBGA FBGA VFBGA VFBGA VFBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260 260 260 260 225 260 260 260
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
surface mount YES YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) TIN SILVER COPPER Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Matte Tin (Sn) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form BALL BALL BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30 30 30 30 NOT SPECIFIED 30 30 30
type SLC NAND TYPE NAND TYPE SLC NAND TYPE SLC NAND TYPE SLC NAND TYPE SLC NAND TYPE SLC NAND TYPE SLC NAND TYPE SLC NAND TYPE
Maker Micron Technology - Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Parts packaging code BGA BGA BGA BGA BGA - BGA BGA BGA
Contacts 63 63 63 63 63 - 63 63 63
ECCN code 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A - 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A
length 13 mm 13 mm 13 mm 13 mm 13 mm - 13 mm 13 mm 13 mm
Number of functions 1 1 1 1 1 - 1 1 1
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Programming voltage 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V - 1.8 V 1.8 V 1.8 V
Maximum seat height 1 mm 1 mm 1 mm 1 mm 1 mm - 1 mm 1 mm 1 mm
Maximum supply voltage (Vsup) 1.95 V 1.95 V 1.95 V 1.95 V 1.95 V - 1.95 V 1.95 V 1.95 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V - 1.7 V 1.7 V 1.7 V
width 10.5 mm 10.5 mm 10.5 mm 10.5 mm 10.5 mm - 10.5 mm 10.5 mm 10.5 mm
Award-winning review | Exploring Micron's 176-layer 3D NAND technology & 1α DRAM technology
[Event Details] Prize-winning Comments | Exploring Micron's 176-layer 3D NAND Technology1α DRAM TechnologyAs the most technologically advanced NAND node on the market, Micron's industry-first 176-laye...
EEWORLD社区 Embedded System
【Goodbye 2021, Hello 2022】At the end of a busy year
2021 was the busiest year. I was busy looking for MCU replacements, modifying programs, playing with development boards, and attending seminars//live broadcasts. I gained a lot. 2022 will continue to ...
江长活 Talking
51 MCU calls the delay function in the for loop
I am a novice. When I used a 51 microcontroller to make a marquee, I called a delay function in a for loop, but it didn't work. What's the reason? When debugging, I found that the program did not ente...
hailong78596 51mcu
Bicycle computer based on GD32E231C8T6
Bicycle computer based on GD32E231C8T61. Introduction This design is based on the GD32E231C8T6 bicycle computer. GD32E231C8T6 is a fully functional single-chip microcomputer based on the ARM Cortex-M2...
xujinxi GD32 MCU
This week's highlights
[b][font=微软雅黑][size=4] [/size][/font][/b][b][url=https://e2echina.ti.com/question_answer/analog/data_converters/f/58/t/158478][font=微软雅黑][size=4]During the ADS1299 evaluation version test, it was foun...
橙色凯 Analogue and Mixed Signal
STM device I2C drives 0.96 OLED display
I have been struggling with the hardware I2C of STM32 for more than half a month. Suddenly I feel that I am inefficient and wasting time . Fortunately, I finally used 32 today....
七月秋 stm32/stm8

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号