LIGHT EMITTING DIODES
1.6÷4.6
µ
m
÷
Model LED38-PR
•Light Emitting Diodes
LED38-PR
are designed for emitting at a spectral
range around 3800 nm. Heterostructures (HS) are grown on InAs
substrates. The output emission can be modulated by current flowing in
a forward direction.
•Light Emitting Diodes
LED38-PR
are developed for using in optical gas
sensors and medical diagnostics. They have stable output power and
lifetime more then 10000 hours.
•Related products: Our standard
LED Driver
provides power supply of
LED38-PR
in two recommended here regimes (Quasi-CW and Pulsed).
3.8
µ
m 16
µ
W
Parameters
Wavelength,
µm
FWHM,
µm
Optical Power,
µW
Quasi-CW @ 200 mA
Pulsed@1A
Switching Time, ns
Operating Temperature
Range,
o
C
Emitting Area,
µm
Soldering temperature
Package
Min
3.70
0.60
12
180
10
Typ
3.80
0.70
16
200
30
-240÷+50
300x300
260
o
C
Max
3.90
0.80
Recommended regimes of operation
Quasi-CW
20
220
50
f=2 kHz
200 mA
250
µs
250
µs
Pulse
2A
500
µs
1
µs
f=2 kHz
TO-18 with Parabolic Reflector
LED38 typical spectra at different temperatures
20
Package TO-18 with Reflector
15
Intensity, a.u.
T=6°C
10
T=21°C
T=50°C
5
0
2700 2900 3100 3300 3500 3700 3900 4100 4300 4500 4700
Wavelength, nm
20
16
LED38 - typical power vs. current
characteristic at different
temperatures
LED38 - typical Current-voltage
characteristic
40
30
20
Far field pattern
with and without reflector
1
0,9
0,8
0,7
0,6
Power,
µW
Current, mA
12
8
4
0
10
0
-2
-1,5
-1
-0,5-10 0
-20
-30
0,5
0,5
0,4
0,3
0,2
0,1
T=6°C
T=21°C
T=50°C
0
LED38 (without reflector)
0
50
100
Current, mA
150
200
-40
Voltage, V
LED38-PR (with reflector)
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