MJE800 datasheet, PDF - EEWORLD Datasheet

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MJE800: Description4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126; CategoryDiscrete semiconductor The transistor; File Size338KB，2 Pages; ManufacturerCentral Semiconductor

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MJE800 Overview

4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126

MJE800 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Reach Compliance Code	unknow
JESD-609 code	e0
Terminal surface	Tin/Lead (Sn/Pb)

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MJE700 THRU MJE703

MJE800 THRU MJE803

PNP

NPN

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY

POWER DARLINGTON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MJE700, MJE800

series devices are medium power complementary

silicon Darlington transistors designed for audio amplifier

applications as complementary output devices.

MARKING: FULL PART NUMBER

TO-126 CASE

MJE700

MJE701

MJE800

MJE801

5.0

4.0

100

-65 to +150

3.13

MJE702

MJE703

MJE802

MJE803

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

ICEO

IEBO

BVCEO

VCE(SAT)

VBE(ON)

hFE

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

UNITS

°C

°C/W

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=Rated VCBO

VCB=Rated VCBO, TC=100°C

VCE=Rated VCEO

VEB=5.0V

IC=50mA (MJE702,703,802,803)

IC=50mA (MJE700,701,800,801)

IC=1.5A, IB=30mA (MJE700,702,800,802)

IC=2.0A, IB=40mA (MJE701,703,801,803)

IC=4.0A, IB=40mA

VCE=3.0V, IC=1.5A (MJE700,702,800,802)

VCE=3.0V,

IC=2.0A (MJE701,703,801,803)

IC=4.0A

IC=1.5A (MJE700,702,800,802)

IC=2.0A (MJE701,703,801,803)

IC=4.0A

IC=1.5A, f=1.0MHz

MAX

100

500

100

2.0

UNITS

μA

2.5

2.8

3.0

2.5

3.0

750

100

1.0

MHz

R2 (23-January 2014)

MJE800 Related Products

	MJE800	MJE700	MJE701	MJE702	MJE802	MJE803	MJE703
Description	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Reach Compliance Code	unknow	not_compliant	_compli	_compli	unknow	_compli	unknow
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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