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MBR3200G-SMC-R

Description
3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size146KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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MBR3200G-SMC-R Overview

3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

MBR3200G-SMC-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMC, 2 PIN
Reach Compliance Codecompli
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
Maximum reverse current50 µA
Reverse test voltage200 V
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

MBR3200G-SMC-R Related Products

MBR3200G-SMC-R MBR3200G-Z21D-B MBR3200L-Z21D-B MBR3200 MBR3200L-SMC-R
Description 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
Is it Rohs certified? conform to conform to conform to - conform to
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD
package instruction SMC, 2 PIN O-XALF-W2 O-XALF-W2 - SMC, 2 PIN
Reach Compliance Code compli compli compli - compli
Other features FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS - FREE WHEELING DIODE, LOW POWER LOSS
application EFFICIENCY EFFICIENCY EFFICIENCY - EFFICIENCY
Configuration SINGLE SINGLE SINGLE - SINGLE
Diode component materials SILICON SILICON SILICON - SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 0.9 V 0.9 V 0.9 V - 0.9 V
JEDEC-95 code DO-214AB DO-201AD DO-201AD - DO-214AB
JESD-30 code R-PDSO-C2 O-XALF-W2 O-XALF-W2 - R-PDSO-C2
Maximum non-repetitive peak forward current 80 A 80 A 80 A - 80 A
Number of components 1 1 1 - 1
Phase 1 1 1 - 1
Number of terminals 2 2 2 - 2
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C - -65 °C
Maximum output current 3 A 3 A 3 A - 3 A
Package body material PLASTIC/EPOXY UNSPECIFIED UNSPECIFIED - PLASTIC/EPOXY
Package shape RECTANGULAR ROUND ROUND - RECTANGULAR
Package form SMALL OUTLINE LONG FORM LONG FORM - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Maximum repetitive peak reverse voltage 200 V 200 V 200 V - 200 V
Maximum reverse current 50 µA 50 µA 50 µA - 50 µA
Reverse test voltage 200 V 200 V 200 V - 200 V
surface mount YES NO NO - YES
technology SCHOTTKY SCHOTTKY SCHOTTKY - SCHOTTKY
Terminal form C BEND WIRE WIRE - C BEND
Terminal location DUAL AXIAL AXIAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
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