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Datasheet> All Categories > storage> storage> MT4LC16M4G3DJ-6S
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MT4LC16M4G3DJ-6S

Description
EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
Categorystorage    storage   
File Size497KB，22 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
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MT4LC16M4G3DJ-6S Overview

EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

MT4LC16M4G3DJ-6S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeSOJ
package instruction0.400 INCH, PLASTIC, SOJ-32
Contacts32
Reach Compliance Codenot_compliant
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J32
JESD-609 codee0
length20.98 mm
memory density67108864 bit
Memory IC TypeEDO DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals32
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ32,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height3.68 mm
self refreshYES
Maximum standby current0.0005 A
Maximum slew rate0.15 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.21 mm

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Download Datasheet
16 MEG x 4
EDO DRAM
DRAM
FEATURES
• Single +3.3V ±0.3V power supply
• Industry-standard x4 pinout, timing, functions,
and packages
• 12 row, 12 column addresses (H9) or
13 row, 11 column addresses (G3)
• High-performance CMOS silicon-gate process
• All inputs, outputs and clocks are LVTTL-compat-
ible
• Extended Data-Out (EDO) PAGE MODE access
• Optional self refresh (S) for low-power data
retention
• 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH
distributed across 64ms
MT4LC16M4G3, MT4LC16M4H9
For the latest data sheet, please refer to the Micron Web
site:
www.micronsemi.com/mti/msp/html/datasheet.html
PIN ASSIGNMENT (Top View)
32-Pin SOJ
V
CC
DQ0
DQ1
NC
NC
NC
NC
WE#
RAS#
A0
A1
A2
A3
A4
A5
V
CC
32-Pin TSOP
V
CC
DQ0
DQ1
NC
NC
NC
NC
WE#
RAS#
A0
A1
A2
A3
A4
A5
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vss
DQ3
DQ2
NC
NC
NC
CAS#
OE#
NC/A12**
A11
A10
A9
A8
A7
A6
Vss
OPTIONS
• Refresh Addressing
4,096 (4K) rows
8,192 (8K) rows
• Plastic Packages
32-pin SOJ (400 mil)
32-pin TSOP (400 mil)
• Timing
50ns access
60ns access
• Refresh Rates
Standard Refresh
Self Refresh (128ms period)
MARKING
H9
G3
DJ
TG
-5
-6
None
S*
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vss
DQ3
DQ2
NC
NC
NC
CAS#
OE#
NC/A12**
A11
A10
A9
A8
A7
A6
Vss
**NC on H9 version, A12 on G3 version
16 MEG x 4 EDO DRAM PART NUMBERS
PART NUMBER
MT4LC16M4H9DJ-x
MT4LC16M4H9DJ-x S
MT4LC16M4H9TG-x
MT4LC16M4H9TG-x S
MT4LC16M4G3DJ-x
MT4LC16M4G3DJ-x S
MT4LC16M4G3TG-x
MT4LC16M4G3TG-x S
x = speed
REFRESH
ADDRESSING
4K
4K
4K
4K
8K
8K
8K
8K
PACKAGE
SOJ
SOJ
TSOP
TSOP
SOJ
SOJ
TSOP
TSOP
REFRESH
Standard
Self
Standard
Self
Standard
Self
Standard
Self
NOTE:
1. The 16 Meg x 4 EDO DRAM base number
differentiates the offerings in one place—
MT4LC16M4H9. The fifth field distinguishes the
address offerings: H9 designates 4K addresses and
G3 designates 8K addresses.
2. The “#” symbol indicates signal is active LOW.
*Contact factory for availability
Part Number Example:
GENERAL DESCRIPTION
The 16 Meg x 4 DRAM is a high-speed CMOS,
dynamic random-access memory device containing
67,108,864 bits and designed to operate from 3V to
3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are
functionally organized as 16,777,216 locations con-
taining 4 bits each. The 16,777,216 memory locations
are arranged in 4,096 rows by 4,096 columns on the H9
version and 8,192 rows by 2,048 columns on the G3
version. During READ or WRITE cycles, each location is
MT4LC16M4H9DJ-6
KEY TIMING PARAMETERS
SPEED
-5
-6
t
RC
t
RAC
t
PC
t
AA
t
CAC
t
CAS
84ns
104ns
50ns
60ns
20ns
25ns
25ns
30ns
13ns
15ns
8ns
10ns
16 Meg x 4 EDO DRAM
D22_2.p65 – Rev. 5/00
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.

MT4LC16M4G3DJ-6S Related Products

MT4LC16M4G3DJ-6S MT4LC16M4H9DJ-6 MT4LC16M4G3DJ-5 MT4LC16M4G3DJ-5S MT4LC16M4H9TG-6 MT4LC16M4H9TG-6S MT4LC16M4G3TG-6S MT4LC16M4H9DJ-5 MT4LC16M4H9DJ-5S MT4LC16M4G3DJ-6
Description EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP-32 EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP-32 EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP-32 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Parts packaging code SOJ SOJ SOJ SOJ TSOP TSOP TSOP SOJ SOJ SOJ
package instruction 0.400 INCH, PLASTIC, SOJ-32 0.400 INCH, PLASTIC, SOJ-32 0.400 INCH, PLASTIC, SOJ-32 0.400 INCH, PLASTIC, SOJ-32 0.400 INCH, PLASTIC, TSOP-32 0.400 INCH, PLASTIC, TSOP-32 0.400 INCH, PLASTIC, TSOP-32 0.400 INCH, PLASTIC, SOJ-32 0.400 INCH, PLASTIC, SOJ-32 0.400 INCH, PLASTIC, SOJ-32
Contacts 32 32 32 32 32 32 32 32 32 32
Reach Compliance Code not_compliant unknown not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
Maximum access time 60 ns 60 ns 50 ns 50 ns 60 ns 60 ns 60 ns 50 ns 50 ns 60 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
length 20.98 mm 20.98 mm 20.98 mm 20.98 mm 20.96 mm 20.96 mm 20.96 mm 20.98 mm 20.98 mm 20.98 mm
memory density 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit
Memory IC Type EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM
memory width 4 4 4 4 4 4 4 4 4 4
Number of functions 1 1 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1 1 1
Number of terminals 32 32 32 32 32 32 32 32 32 32
word count 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words
character code 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 16MX4 16MX4 16MX4 16MX4 16MX4 16MX4 16MX4 16MX4 16MX4 16MX4
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOJ SOJ SOJ SOJ TSOP2 TSOP2 TSOP2 SOJ SOJ SOJ
Encapsulate equivalent code SOJ32,.44 SOJ32,.44 SOJ32,.44 SOJ32,.44 TSOP32,.46 TSOP32,.46 TSOP32,.46 SOJ32,.44 SOJ32,.44 SOJ32,.44
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 235 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 4096 8192 8192 4096 4096 8192 4096 4096 8192
Maximum seat height 3.68 mm 3.68 mm 3.68 mm 3.68 mm 1.2 mm 1.2 mm 1.2 mm 3.68 mm 3.68 mm 3.68 mm
self refresh YES NO NO YES NO YES YES NO YES NO
Maximum standby current 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A
Maximum slew rate 0.15 mA 0.16 mA 0.16 mA 0.16 mA 0.16 mA 0.16 mA 0.15 mA 0.17 mA 0.17 mA 0.13 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form J BEND J BEND J BEND J BEND GULL WING GULL WING GULL WING J BEND J BEND J BEND
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 30 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 10.21 mm 10.21 mm 10.21 mm 10.21 mm 10.16 mm 10.16 mm 10.16 mm 10.21 mm 10.21 mm 10.21 mm

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