FDP060AN08A0_NL datasheet, PDF

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FDP060AN08A0_NL: DescriptionPower Field-Effect Transistor, 80A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size187KB，11 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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FDP060AN08A0_NL Overview

Power Field-Effect Transistor, 80A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

FDP060AN08A0_NL Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	350 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V
Maximum drain current (Abs) (ID)	16 A
Maximum drain current (ID)	80 A
Maximum drain-source on-resistance	0.006 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	255 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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FDB060AN08A0 / FDP060AN08A0

November 2002

FDB060AN08A0 / FDP060AN08A0

N-Channel PowerTrench

MOSFET

75V, 80A, 6.0mΩ

Features

• r

DS(ON)

= 4.8mΩ (Typ.), V

= 10V, I

= 80A

• Q

(tot) = 73nC (Typ.), V

= 10V

• Low Miller Charge

• Low Q

Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82680

Applications

• 42V Automotive Load Control

• Starter / Alternator Systems

• Electronic Power Steering Systems

• Electronic Valve Train Systems

• DC-DC converters and Off-line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V systems

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

SOURCE

TO-220AB

FDP SERIES

TO-263AB

FDB SERIES

DRAIN

(FLANGE)

GATE

MOSFET Maximum Ratings

= 25°C unless otherwise noted

Symbol

DSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Continuous (T

< 127

C, V

= 10V)

Continuous (T

amb

= 25 C, V

= 10V, with R

θJA

= 43 C/W)

Pulsed

, T

STG

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25 C

Operating and Storage Temperature

Parameter

Ratings

±20

Figure 4

350

255

1.7

-55 to 175

Units

Thermal Characteristics

θJC

θJA

Thermal Resistance Junction to Case TO-220,TO-263

Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2)

Thermal Resistance Junction to Ambient TO-263, 1in

copper pad area

0.58

C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

FDB060AN08A0 / FDP060AN08A0 Rev. A

FDP060AN08A0_NL Related Products

	FDP060AN08A0_NL	FDB060AN08A0_NL
Description	Power Field-Effect Transistor, 80A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN	Power Field-Effect Transistor, 80A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	Fairchild	Fairchild
Parts packaging code	TO-220AB	D2PAK
package instruction	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	4
Reach Compliance Code	compliant	not_compliant
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	350 mJ	350 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V	75 V
Maximum drain current (Abs) (ID)	16 A	16 A
Maximum drain current (ID)	80 A	80 A
Maximum drain-source on-resistance	0.006 Ω	0.006 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-263AB
JESD-30 code	R-PSFM-T3	R-PSSO-G2
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	255 W	255 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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