FDB060AN08A0 / FDP060AN08A0
November 2002
FDB060AN08A0 / FDP060AN08A0
N-Channel PowerTrench
®
MOSFET
75V, 80A, 6.0mΩ
Features
• r
DS(ON)
= 4.8mΩ (Typ.), V
GS
= 10V, I
D
= 80A
• Q
g
(tot) = 73nC (Typ.), V
GS
= 10V
• Low Miller Charge
• Low Q
RR
Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82680
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
DRAIN
(FLANGE)
D
SOURCE
DRAIN
GATE
SOURCE
TO-220AB
FDP SERIES
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
GATE
G
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
C
< 127
o
C, V
GS
= 10V)
Continuous (T
amb
= 25 C, V
GS
= 10V, with R
θJA
= 43 C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
Parameter
Ratings
75
±20
80
16
Figure 4
350
255
1.7
-55 to 175
Units
V
V
A
A
A
mJ
W
W/
o
C
o
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
0.58
62
43
o
C/W
o
o
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDB060AN08A0 / FDP060AN08A0 Rev. A
FDB060AN08A0 / FDP060AN08A0
Package Marking and Ordering Information
Device Marking
FDB060AN08A0
FDP060AN08A0
Device
FDB060AN08A0
FDP060AN08A0
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 60V
V
GS
= 0V
V
GS
=
±20V
T
C
= 150 C
o
75
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
I
D
= 80A, V
GS
= 10V
r
DS(ON)
Drain to Source On Resistance
I
D
= 40A, V
GS
= 6V
I
D
= 80A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
-
-
0.0048
0.0066
0.010
4
0.006
0.010
0.013
Ω
V
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 40V
I
D
= 80A
I
g
= 1.0mA
-
-
-
-
-
-
-
5150
800
230
73
10
29
19
16
-
-
-
95
13
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Switching Characteristics
(V
GS
= 10V)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 40V, I
D
= 80A
V
GS
= 10V, R
GS
= 3.9Ω
-
-
-
-
-
-
-
19
79
37
38
-
147
-
-
-
-
113
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 80A
I
SD
= 40A
I
SD
= 75A, dI
SD
/dt = 100A/µs
I
SD
= 75A, dI
SD
/dt = 100A/µs
-
-
-
-
-
-
-
-
1.25
1.0
37
38
V
V
ns
nC
Notes:
1:
Starting T
J
= 25°C, L = 109µH, I
AS
= 80A.
2:
Pulse width = 100s
©2002 Fairchild Semiconductor Corporation
FDB060AN08A0 / FDP060AN08A0 Rev. A
FDB060AN08A0 / FDP060AN08A0
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
150
CURRENT LIMITED
BY PACKAGE
125
I
D
, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.0
0.8
100
0.6
75
0.4
50
0.2
25
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t , RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
SINGLE PULSE
0.01
10
-5
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
V
GS
= 10V
175 - T
C
150
1000
I
DM
, PEAK CURRENT (A)
100
70
10
-5
10
-4
10
-3
10
-2
t , PULSE WIDTH (s)
10
-1
10
0
10
1
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
FDB060AN08A0 / FDP060AN08A0 Rev. A
FDB060AN08A0 / FDP060AN08A0
Typical Characteristics
T
C
= 25°C unless otherwise noted
1000
10µs
100µs
I
D
, DRAIN CURRENT (A)
100
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
DC
1
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10ms
I
AS
, AVALANCHE CURRENT (A)
100
500
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
175
V
GS
= 10V
150
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
125
100
75
V
GS
= 5V
50
T
C
= 25
o
C
25
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
V
GS
= 7V
175
150
I
D
, DRAIN CURRENT (A)
125
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
75
50
25
0
3.5
4.0
4.5
5.0
5.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6.0
T
J
= 25
o
C
T
J
= -55
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
7.5
DRAIN TO SOURCE ON RESISTANCE(mΩ)
7.0
6.5
V
GS
= 6V
6.0
5.5
5.0
4.5
4.0
0
20
40
I
D
, DRAIN CURRENT (A)
60
80
V
GS
= 10V
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
Figure 8. Saturation Characteristics
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
V
GS
= 10V, I
D
= 80A
0.5
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
FDB060AN08A0 / FDP060AN08A0 Rev. A
FDB060AN08A0 / FDP060AN08A0
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.2
I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
1.1
0.8
1.0
0.6
0.4
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
0.9
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
7000
C
ISS
=
C
GS
+ C
GD
C, CAPACITANCE (pF)
C
OSS
≅
C
DS
+ C
GD
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V
DD
= 40V
V
GS
, GATE TO SOURCE VOLTAGE (V)
8
6
1000
C
RSS
=
C
GD
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 80A
I
D
= 16A
0
20
40
Q
g
, GATE CHARGE (nC)
60
80
2
V
GS
= 0V, f = 1MHz
100
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
75
0
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2002 Fairchild Semiconductor Corporation
FDB060AN08A0 / FDP060AN08A0 Rev. A
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