934067045115 datasheet, PDF - EEWORLD Datasheet

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934067045115: DescriptionMOSFET N-CH 40V 100A LFPAK; CategoryDiscrete semiconductor The transistor; File Size727KB，13 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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934067045115 Overview

MOSFET N-CH 40V 100A LFPAK

934067045115 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Nexperia
package instruction	SOP-8, LFPAK56-4
Reach Compliance Code	not_compliant
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (ID)	100 A
Maximum drain-source on-resistance	0.0044 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-235
JESD-30 code	R-PSSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	516 A
Guideline	AEC-Q101; IEC-60134
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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BUK9Y4R4-40E

7 May 2013

N-channel 40 V, 4.4 mΩ logic level MOSFET in LFPAK56

Product data sheet

1. General description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS

technology. This product has been designed and qualified to AEC Q101 standard for use

in high performance automotive applications.

2. Features and benefits

•

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with V

GS(th)

rating of greater than 0.5 V at 175 °C

3. Applications

•

12 V Automotive systems

Motors, lamps and solenoid control

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

tot

DSon

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

Conditions

≥ 25 °C; T

≤ 175 °C

= 5 V; T

= 25 °C;

Fig. 1

= 25 °C;

Fig. 2

= 5 V; I

= 25 A; T

= 25 °C;

Fig. 11

[1]

Min

Typ

Max

100

147

Unit

Static characteristics

drain-source on-state

resistance

gate-drain charge

3.7

4.4

mΩ

Dynamic characteristics

= 5 V; I

= 25 A; V

= 32 V;

= 25 °C;

Fig. 13; Fig. 14

[1]

Continuous current is limited by package.

8.7

934067045115 Related Products

	934067045115	BUK9Y4R4-40E,115
Description	MOSFET N-CH 40V 100A LFPAK	MOSFET N-CH 40V 100A LFPAK
package instruction	SOP-8, LFPAK56-4	SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code	not_compliant	not_compliant
Other features	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	100 mJ	100 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V	40 V
Maximum drain current (ID)	100 A	100 A
Maximum drain-source on-resistance	0.0044 Ω	0.0044 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-235	MO-235
JESD-30 code	R-PSSO-G4	R-PSSO-G4
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	516 A	516 A
Guideline	AEC-Q101; IEC-60134	AEC-Q101; IEC-60134
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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