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MTP1N100E

Description
Power Field Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size208KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MTP1N100E Overview

Power Field Effect Transistor

MTP1N100E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)45 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (Abs) (ID)1 A
Maximum drain current (ID)1 A
Maximum drain-source on-resistance9 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
Maximum pulsed drain current (IDM)3 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
MTP1N100E
Designer’s™ Data Sheet
TMOS E−FET.™
Power Field Effect
Transistor
High−Performance Silicon−Gate CMOS
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced TMOS E−FET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drain−to−source
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
http://onsemi.com
TMOS POWER FET
1.0 AMPERES, 1000 VOLTS
R
DS(on)
= 9.0
W
TO−220AB
CASE 221A−06
Style 5
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
D
®
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−Source Voltage
Drain−Gate Voltage (R
GS
= 1.0 MΩ)
Gate−Source Voltage — Continuous
Gate−Source Voltage
— Non−Repetitive (t
p
10 ms)
Drain Current — Continuous
Drain Current
— Continuous @ 100°C
Drain Current
— Single Pulse (t
p
10
μs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy — Starting T
J
= 25°C
(V
DD
= 100 Vdc, V
GS
= 10 Vdc, I
L
= 3.0 Apk, L = 10 mH, R
G
= 25
Ω)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
D
G
S
Value
1000
1000
±
20
±
40
1.0
0.8
3.0
75
0.6
−55
to 150
45
1.67
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
I
DM
P
D
T
J
, T
stg
E
AS
R
θJC
R
θJA
T
L
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2006
August, 2006
Rev. 3
1
Publication Order Number:
MTP1N100E/D
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