SS23 datasheet, PDF - EEWORLD Datasheet

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SS23: Description2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC; Categorysemiconductor Discrete semiconductor; File Size381KB，3 Pages; ManufacturerDAYA; Websitehttp://www.cndaya.com/

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SS23 Overview

2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC

SS23 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	Plastic, SMAJ, 2 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	single
Diode component materials	silicon
Diode type	rectifier diode
application	GENERAL PURPOSE
Phase	1
Maximum repetitive peak reverse voltage	30 V
Maximum average forward current	2 A
Maximum non-repetitive peak forward current	50 A

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SS22 THRU SS210

•

Features

Schottky Barrier Rectifier

Guard Ring Protection

Low Forward Voltage

Reverse Energy Tested

High Current Capability

Extremely Low Thermal Resistance

2 Amp Schottky

Rectifier

20 to 100 Volts

DO-214AC

(SMA)

H

Cathode Band

•

Maximum Ratings

Operating Temperature: -55°C to +125°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 15

°C/W

Junction To Lead

MCC

Catalog

Number

SS22

SS23

SS24

SS25

SS26

SS28

SS210

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

20V

30V

40V

50V

60V

80V

100V

Maximum

RMS

Voltage

14V

21V

28V

35V

42V

56V

70V

Maximum

DC

Blocking

Voltage

20V

30V

40V

50V

60V

80V

100V

J

SS22

SS23

SS24

SS25

SS26

SS28

SS210

A

C

E

F

G

D

B

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

SS22-SS24

SS25-SS26

SS28-SS210

Maximum DC Reverse

Current At Rated DC

Blocking Voltage

I

F(AV)

I

FSM

2.0A

50A

T

J

= 100°C

8.3ms, half sine

DIM

A

B

C

D

E

F

G

H

J

INCHES

MIN

.078

.067

.002

---

.035

.065

.205

.160

.100

MAX

.116

.089

.008

.02

.055

.096

.224

.180

.112

DIMENSIONS

MM

MIN

1.98

1.70

.05

---

.89

1.65

5.21

4.06

2.57

MAX

2.95

2.25

.20

.51

1.40

2.45

5.69

4.57

2.84

NOTE

V

F

.55V

.70V

.85V

0.5mA

I

FM

= 2.0A;

T

J

= 25°C*

SUGGESTED SOLDER

PAD LAYOUT

0.090”

I

R

T

J

= 25°C

0.085”

Typical Junction

Capacitance

SS22

C

J

230pF

SS23-SS210

50pF

*Pulse test: Pulse width 300

µsec,

Duty cycle 2%

Measured at

1.0MHz, V

R

=4.0V

0.070”

SS23 Related Products

	SS23	SS22	SS24	SS25	SS26	SS28
Description	2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC	2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA	RECTIFIER DIODE	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AA
Number of terminals	2	-	-	2	2	2
Number of components	1	-	-	1	1	1
Processing package description	Plastic, SMAJ, 2 PIN	-	-	Plastic, SMB, 2 PIN	SMB, 2 PIN	Plastic, SMB, 2 PIN
state	DISCONTINUED	-	ACTIVE	TRANSFERRED	ACTIVE	ACTIVE
packaging shape	Rectangle	-	-	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	-	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	-	-	Yes	Yes	Yes
Terminal form	C BEND	-	-	C BEND	C BEND	C BEND
Terminal location	pair	-	-	pair	pair	pair
Packaging Materials	Plastic/Epoxy	-	-	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
Craftsmanship	SCHOTTKY	-	-	SCHOTTKY	SCHOTTKY	SCHOTTKY
structure	single	-	-	single	single	single
Diode component materials	silicon	-	-	silicon	silicon	silicon
Diode type	rectifier diode	-	rectifier diode	rectifier diode	rectifier diode	rectifier diode
application	GENERAL PURPOSE	-	-	EFFICIENCY	GENERAL PURPOSE	EFFICIENCY
Phase	1	-	-	1	1	1
Maximum repetitive peak reverse voltage	30 V	-	-	50 V	60 V	80 V
Maximum average forward current	2 A	-	-	2 A	2 A	2 A
Maximum non-repetitive peak forward current	50 A	-	-	75 A	50 A	50 A

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