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SS24

Description
RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size381KB,3 Pages
ManufacturerDAYA
Websitehttp://www.cndaya.com/
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SS24 Overview

RECTIFIER DIODE

SS24 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typerectifier diode
SS22 THRU SS210
Features
Schottky Barrier Rectifier
Guard Ring Protection
Low Forward Voltage
Reverse Energy Tested
High Current Capability
Extremely Low Thermal Resistance
2 Amp Schottky
Rectifier
20 to 100 Volts
DO-214AC
(SMA)
H
Cathode Band
Maximum Ratings
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 15
°C/W
Junction To Lead
MCC
Catalog
Number
SS22
SS23
SS24
SS25
SS26
SS28
SS210
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
40V
50V
60V
80V
100V
Maximum
RMS
Voltage
14V
21V
28V
35V
42V
56V
70V
Maximum
DC
Blocking
Voltage
20V
30V
40V
50V
60V
80V
100V
J
SS22
SS23
SS24
SS25
SS26
SS28
SS210
A
C
E
F
G
D
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
SS22-SS24
SS25-SS26
SS28-SS210
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
I
F(AV)
I
FSM
2.0A
50A
T
J
= 100°C
8.3ms, half sine
DIM
A
B
C
D
E
F
G
H
J
INCHES
MIN
.078
.067
.002
---
.035
.065
.205
.160
.100
MAX
.116
.089
.008
.02
.055
.096
.224
.180
.112
DIMENSIONS
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
MAX
2.95
2.25
.20
.51
1.40
2.45
5.69
4.57
2.84
NOTE
V
F
.55V
.70V
.85V
0.5mA
I
FM
= 2.0A;
T
J
= 25°C*
SUGGESTED SOLDER
PAD LAYOUT
0.090”
I
R
T
J
= 25°C
0.085”
Typical Junction
Capacitance
SS22
C
J
230pF
SS23-SS210
50pF
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
Measured at
1.0MHz, V
R
=4.0V
0.070”

SS24 Related Products

SS24 SS22 SS23 SS25 SS26 SS28
Description RECTIFIER DIODE 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AA
state ACTIVE - DISCONTINUED TRANSFERRED ACTIVE ACTIVE
Diode type rectifier diode - rectifier diode rectifier diode rectifier diode rectifier diode
Number of terminals - - 2 2 2 2
Number of components - - 1 1 1 1
Processing package description - - Plastic, SMAJ, 2 PIN Plastic, SMB, 2 PIN SMB, 2 PIN Plastic, SMB, 2 PIN
packaging shape - - Rectangle Rectangle Rectangle Rectangle
Package Size - - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount - - Yes Yes Yes Yes
Terminal form - - C BEND C BEND C BEND C BEND
Terminal location - - pair pair pair pair
Packaging Materials - - Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
Craftsmanship - - SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
structure - - single single single single
Diode component materials - - silicon silicon silicon silicon
application - - GENERAL PURPOSE EFFICIENCY GENERAL PURPOSE EFFICIENCY
Phase - - 1 1 1 1
Maximum repetitive peak reverse voltage - - 30 V 50 V 60 V 80 V
Maximum average forward current - - 2 A 2 A 2 A 2 A
Maximum non-repetitive peak forward current - - 50 A 75 A 50 A 50 A
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