rejection. These parameters are critical for reference clock
distribution in systems using high-performance ASICs and
microprocessors. The CY2309A PLL feedback is internal and
is connected to CLKOUT.
The device features a guaranteed maximum TTB window
specifying all occurrences of output clocks with respect to the
input reference clock across variations in output frequency,
supply voltage, operating temperature, input edge rate, and
process.
The CY2309A has two banks of four outputs each, which can
be controlled by the select inputs as shown in
Table 1.
If all the
output clocks are not required, Bank B can be three-stated.
The select inputs also allow the input clock to be directly
applied to the outputs for chip and system testing purposes
(PLL bypass mode).
The CY2309A PLL enters a power-down state when there are
no rising edges on the REF input. In this mode, all outputs are
three-stated and the PLL is turned off, resulting in less than
50
µA
of current draw. The PLL shuts down in two additional
cases, as shown in
Table 1.
The CY2309A is available in standard (–1) or high-drive (–1H)
output versions. The high-drive features faster rise and fall
times.
Description
The CY2309A is a high-performance 200-MHz zero delay
buffer designed for high-speed clock distribution. The
integrated PLL is designed for low jitter and optimized for noise
Block Diagram
Pin Configuration
TSSOP
Top View
PLL
MUX
CLKOUT
CLKA1
CLKA2
CLKA3
CLKA4
CLKB1
REF
REF
CLKB1
CLKB2
V
DD
GND
CLKB3
CLKB4
S2
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
CLKOUT
CLKA1
CLKA2
V
DD
GND
CLKA3
CLKA4
S1
S2
Select Input
Decoding
S1
CLKB2
CLKB3
CLKB4
Cypress Semiconductor Corporation
Document #: 38-07378 Rev. *B
•
3901 North First Street
•
San Jose
,
CA 95134
•
408-943-2600
Revised March 5, 2003
CY2309A
Pin Description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Name
REF
CLKB1
CLKB2
V
DD
GND
CLKB3
[1]
CLKB4
[1]
S2
[2]
S1
[2]
CLKA4
[1]
CLKA3
GND
V
DD
CLKA2
[1]
CLKA1
[1]
CLKOUT
[1]
[1]
[1]
[1]
Description
Input reference frequency, 5V-tolerant input
Clock output, Bank B
Clock output, Bank B
3.3V Supply
Ground
Clock output, Bank B
Clock output, Bank B
Select input, 5V-tolerant input
Select input, 5V-tolerant input
Clock output, Bank A
Clock output, BankA
Ground
3.3V supply
Clock output, Bank A
Clock output, Bank A
Clock output, internal feedback on this pin
Table 1. Select Input Decoding
S2
0
0
1
1
S1
0
1
0
1
CLOCK A1–A4
Three-state
Driven
Driven
Driven
CLOCK B1–B4
Three-state
Three-state
Driven
Driven
CLKOUT
[3]
Driven
Driven
Driven
Driven
Output Source
PLL
PLL
Reference
PLL
PLL Shutdown
N
N
Y
N
Zero Delay and Skew Control
Since the CLKOUT is the internal feedback to the PLL, its
relative loading can adjust the input-output delay. See
Figure 1
For applications requiring zero input-output delay, all outputs,
including CLKOUT, must be equally loaded. Even if CLKOUT
is not used, it must have a capacitive load, equal to that on
other outputs, for obtaining zero input-output delay. If
input-output delay adjustments are required, use the above
graph to calculate loading differences between the CLKOUT
and other outputs.
For zero output-output skew, be sure to load all outputs
equally. For further information on using CY2309A, refer to the
application note “CY2309 as PCI and SDRAM Buffers.”
Notes:
1. Weak pull-down.
2. Weak pull-up.
3. This output is driven and has an internal feedback for the PLL. The load on this output can be adjusted to change the skew between the reference and output.
Document #: 38-07378 Rev. *B
Page 2 of 9
CY2309A
Figure 1. REF. Input to CLKA/CLKB Delay vs. Difference in Loading between CLKOUT and CLKA/CLKB
Document #: 38-07378 Rev. *B
Page 3 of 9
CY2309A
Maximum Ratings
Supply Voltage to Ground Potential ............... –0.5V to +7.0V
DC Input Voltage (Except
REF, S2, S1) ..........................................–0.5V to V
DD
+ 0.5V
DC Input Voltage (REF, S1, S2) ....................... –0.5V to 7.0V
Storage Temperature .................................–65°C to +150°C
Junction Temperature ................................................. 125°C
This device contains circuitry to protect the inputs against
damage due to high static voltages or electric fields; however,
precautions should be taken to avoid application of any
voltage higher than the maximum rated voltages to this circuit.
For proper operation, V
in
and V
out
should be constrained to the
range:
V
SS
< (V
in
or V
out
) < V
DD
.
Unused inputs must always be tied to an appropriate logic
voltage level (either V
SS
or V
DD
).
Table 2. Operating Conditions for CY2309AZC-XX Commercial Temperature Devices
Parameter
V
DD
T
A
C
IN
t
PU
Supply Voltage
Operating Temperature (Ambient Temperature)
Input Capacitance
Power-up time for all VDDs to reach minimum specified voltage (power ramps must be
monotonic)
0.05
Description
Min.
0
Max.
70
7
500
Unit
V
°C
pF
ms
3.135 3.465
Table 3. Electrical Characteristics for CY2309AZC-XX Commercial Temperature Devices
Parameter
V
IL
V
IH
I
IL
I
IH
I
OL
I
OH
I
DDS
I
DD
Description
Input LOW Voltage
Input HIGH Voltage
Input LOW Current
Input HIGH Current
Output LOW Current
[4]
, (–1)
(–1H)
Output HIGH
(–1H)
Power-down Supply Current
Supply Current
REF = 0V, S1 = V
DD
, S2 = V
DD
Unloaded outputs @ 200 MHz
Loaded outputs @ 200 MHz, C
L
= 10 pF
Table 4. Switching Characteristics for CY2309AZC-XX Commercial Temperature Devices
[5]
Parameter
Description
Reference Frequency
Reference Edge Rate
Reference Duty Cycle
t
1
Output Frequency
Duty Cycle
[4]
= t
2
/
t
1
t
3
t
4
Rising Edge Rate
[4]
, (–1)
Rising Edge Rate
[4]
, (–1H)
Falling Edge Rate
[4]
, (–1)
Falling Edge Rate
[4]
,
Test Conditions
CMOS Levels, 30% of V
DD
CMOS Levels, 70% of V
DD
V
IN
= 0V
V
IN
= V
DD
V
OL
= 0.5V
V
OH
= V
DD
– 0.5V
Min.
0.7
Max.
0.25
50
10
Unit
V
DD
V
DD
µA
µA
mA
12
18
–12
–18
50
115
145
Current
[4]
,
(–1)
mA
µA
mA
Test Conditions
30% to 70% of V
DD
C
L
= 10 pF
C
L
=15 pF
Measured at V
DD
/2
20% to 80% of V
DD
, C
L
= 15 pF
20% to 80% of V
DD
, C
L
= 15 pF
80% to 20% of V
DD
, C
L
= 15 pF
80% to 20% of V
DD
, C
L
= 15 pF
Min.
50
0.5
25
50
50
45
0.8
1
0.8
1
Typ.
Max.
200
4
75
200
140
Unit
MHz
V/ns
%
MHz
MHz
%
V/ns
V/ns
V/ns
V/ns
50
55
4
4
4
4
(–1H)
Notes:
4. Parameter is guaranteed by design and characterization. Not 100% tested in production.
5. All parameters specified with loaded outputs.
Document #: 38-07378 Rev. *B
Page 4 of 9
CY2309A
Table 4. Switching Characteristics for CY2309AZC-XX Commercial Temperature Devices
[5]
(continued)
Parameter
TTB
t
5
t
6
t
7
t
J
t
LOCK
Description
Total Timing Budget window
[6]
Output to Output Skew
[4]
Input to Output Skew (Static
Phase Error)
[4]
Device to Device Skew
[4]
Cycle to Cycle Jitter
PLL Lock Time
[4]
[4]
Test Conditions
Outputs @ 200 MHz, Tracking Skew Not
Included
All Outputs Equally Loaded
Measured at V
DD
/2,
REF to CLKOUT
Measured at V
DD
/2
Loaded Outputs
Stable Power Supply, Valid Clock at REF
Min.
Typ.
Max.
650
200
250
500
200
35
1.0
Unit
ps
ps
ps
ps
ps
ps
RMS
ms
Table 5. Operating Conditions for CY2309AZI-XX Industrial Temperature Devices
Parameter
V
DD
T
A
C
IN
t
PU
Supply Voltage
Operating Temperature (Ambient Temperature)
Input Capacitance
Power-up time for all VDDs to reach minimum specified voltage (power ramps must
be monotonic)
0.05
Description
Min.
3.135
–40
Max.
3.465
85
7
500
Unit
V
°C
pF
ms
Table 6. Electrical Characteristics for CY2309AZI-XX Industrial Temperature Devices
Parameter
V
IL
V
IH
I
IL
I
IH
I
OL
I
OH
I
DDS
I
DD
Description
Input LOW Voltage
Input HIGH Voltage
Input LOW Current
Input HIGH Current
Output LOW Current , (–1)
(–1H)
Output HIGH Current ,(–1)
(–1H)
Power-down Supply Current
Supply Current
REF = 0V S1 = V
DD
, S2 = V
DD
Unloaded outputs @ 133 MHz
Loaded outputs @ 133 MHz, C
L
= 10 pF
Table 7. Switching Characteristics for CY2309AZI–1 Industrial Temperature Devices
[5]
Parameter
Name
Reference Frequency
Reference Edge Rate
Reference Duty Cycle
t
1
t
3
t
4
TTB
Output Frequency
Duty Cycle
[4]
= t
2
/
t
1
Rising Edge Rate
[4]
, (–1)
Rising Edge
Falling Edge
Rate
[4]
,
Rate
[4]
,
(–1H)
(–1)
C
L
= 15 pF
Measured at VDD/2
20% to 80% of V
DD
, C
L
= 15 pF
20% to 80% of V
DD
, C
L
= 15 pF
80% to 20% of V
DD
, C
L
= 15 pF
80% to 20% of V
DD
, C
L
= 15 pF
30% to 70% of V
DD
Test Conditions
Min.
50
0.5
25
50
40.0
0.5
0.8
0.5
0.8
50.0
Typ.
Max.
133
4
75
133
60.0
3
4
3
4
650
Unit
MHz
V/ns
%
MHz
%
V/ns
V/ns
V/ns
V/ns
ps
[4]
[4]
Test Conditions
CMOS Level, 30% of V
DD
CMOS Level, 70% of V
DD
V
IN
= 0V
V
IN
= V
DD
V
OL
= 0.5V
V
OH
= V
DD
– 0.5V
Min.
0.7
Max.
0.25
50
10
Unit
V
DD
V
DD
µA
µA
mA
12
18
–12
–18
50
80
110
mA
µA
mA
Falling Edge Rate
[4]
, (–1H)
Total Timing Budget window
[6]
Outputs @ 133 MHz, Tracking Skew
Not Included
Note:
6. TTB is the window between the earliest and the latest output clocks with respect to the input reference clock across variations in output frequency, supply
voltage, operating temperature, input clock edge rate, and process. The measurements are taken with the AC test load specified and include output-output
skew, cycle-cycle jitter, and dynamic phase error.TTB will be equal to or smaller than the maximum specified value at a given output frequency.
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