CA11CF datasheet, PDF - EEWORLD Datasheet

CA11CF: DescriptionSilicon Controlled Rectifier, 1000000mA I(T), 2500V V(DRM); CategoryAnalog mixed-signal IC Trigger device; File Size34KB，1 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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CA11CF Overview

Silicon Controlled Rectifier, 1000000mA I(T), 2500V V(DRM)

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
package instruction	,
Reach Compliance Code	unknown
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	350 mA
Maximum DC gate trigger voltage	4 V
On-state non-repetitive peak current	20000 A
Maximum on-state voltage	2.2 V
Maximum on-state current	1000000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-45 °C
Off-state repetitive peak voltage	2500 V
surface mount	NO
Trigger device type	SCR

	CA11CF	CA11CD	CA12DF	CA11CA	CA12DA
Description	Silicon Controlled Rectifier, 1000000mA I(T), 2500V V(DRM)	Silicon Controlled Rectifier, 1000000mA I(T), 2300V V(DRM)	Silicon Controlled Rectifier, 800000mA I(T), 3500V V(DRM)	Silicon Controlled Rectifier, 1000000mA I(T), 2000V V(DRM)	Silicon Controlled Rectifier, 800000mA I(T), 3000V V(DRM)
Maker	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Critical rise rate of minimum off-state voltage	200 V/us	200 V/us	500 V/us	200 V/us	500 V/us
Maximum DC gate trigger current	350 mA	350 mA	350 mA	350 mA	350 mA
Maximum DC gate trigger voltage	4 V	4 V	4 V	4 V	4 V
On-state non-repetitive peak current	20000 A	20000 A	16000 A	20000 A	16000 A
Maximum on-state voltage	2.2 V	2.2 V	2.5 V	2.2 V	2.5 V
Maximum on-state current	1000000 A	1000000 A	800000 A	1000000 A	800000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-45 °C	-45 °C	-25 °C	-45 °C	-25 °C
Off-state repetitive peak voltage	2500 V	2300 V	3500 V	2000 V	3000 V
surface mount	NO	NO	NO	NO	NO
Trigger device type	SCR	SCR	SCR	SCR	SCR

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