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CA12DA

Description
Silicon Controlled Rectifier, 800000mA I(T), 3000V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size34KB,1 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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CA12DA Overview

Silicon Controlled Rectifier, 800000mA I(T), 3000V V(DRM)

CA12DA Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instruction,
Reach Compliance Codeunknown
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current350 mA
Maximum DC gate trigger voltage4 V
Maximum leakage current50 mA
On-state non-repetitive peak current16000 A
Maximum on-state voltage2.5 V
Maximum on-state current800000 A
Maximum operating temperature125 °C
Minimum operating temperature-25 °C
Off-state repetitive peak voltage3000 V
surface mountNO
Trigger device typeSCR

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CA12DA CA11CD CA11CF CA12DF CA11CA
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Maker Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas )
Reach Compliance Code unknown unknown unknown unknown unknown
Critical rise rate of minimum off-state voltage 500 V/us 200 V/us 200 V/us 500 V/us 200 V/us
Maximum DC gate trigger current 350 mA 350 mA 350 mA 350 mA 350 mA
Maximum DC gate trigger voltage 4 V 4 V 4 V 4 V 4 V
On-state non-repetitive peak current 16000 A 20000 A 20000 A 16000 A 20000 A
Maximum on-state voltage 2.5 V 2.2 V 2.2 V 2.5 V 2.2 V
Maximum on-state current 800000 A 1000000 A 1000000 A 800000 A 1000000 A
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -25 °C -45 °C -45 °C -25 °C -45 °C
Off-state repetitive peak voltage 3000 V 2300 V 2500 V 3500 V 2000 V
surface mount NO NO NO NO NO
Trigger device type SCR SCR SCR SCR SCR
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