W3EG6467S202D4M datasheet, PDF

W3EG6467S202D4M: DescriptionDDR DRAM Module, 64MX64, 0.8ns, CMOS, SO-DIMM-200; Categorystorage storage; File Size195KB，12 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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W3EG6467S202D4M Overview

DDR DRAM Module, 64MX64, 0.8ns, CMOS, SO-DIMM-200

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	MODULE
package instruction	DIMM,
Contacts	200
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.8 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N200
memory density	4294967296 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX64
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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