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VS-MBRB1645TRL-M3

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2
CategoryDiscrete semiconductor    diode   
File Size144KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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VS-MBRB1645TRL-M3 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2

VS-MBRB1645TRL-M3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instructionD2PAK-3/2
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time26 weeks
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.63 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current16 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum repetitive peak reverse voltage45 V
Maximum reverse current200 µA
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
VS-MBRB1635-M3, VS-MBRB1645-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 16 A
Base
cathode
2
FEATURES
150 °C T
J
operation
High frequency operation
Low forward voltage drop
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
D
2
PAK
1
N/C
3
Anode
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
E
AS
Package
Diode variation
16 A
35 V, 45 V
0.57 V
40 mA at 125 °C
150 °C
24 mJ
TO-263AB (D
2
PAK)
Single die
DESCRIPTION
This VS-MBRB16... Schottky rectifier has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
16 A
pk
, T
J
= 125 °C
CHARACTERISTICS
Rectangular waveform
VALUES
16
35/45
1800
0.57
-65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB1635-M3
35
VS-MBRB1645-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
SYMBOL
I
F(AV)
TEST CONDITIONS
T
C
= 134 °C, rated V
R
5 μs sine or 3 μs rect. pulse
Non-repetitive peak surge current
I
FSM
Following any rated
load condition and with
rated V
RRM
applied
VALUES
16
1800
UNITS
A
Surge applied at rated load condition half wave
single phase 60 Hz
Non-repetitive avalanche energy
Repetitive avalanche current
E
AS
I
AR
T
J
= 25 °C, I
AS
= 3.6 A, L = 3.7 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
150
24
3.6
mJ
A
Revision: 03-Mar-14
Document Number: 94949
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VS-MBRB1645TRL-M3 Related Products

VS-MBRB1645TRL-M3 VS-MBRB1645-M3 VS-MBRB1635TRR-M3 VS-MBRB1635TRL-M3
Description Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2
Is it Rohs certified? conform to conform to conform to conform to
Maker Vishay Vishay Vishay Vishay
package instruction D2PAK-3/2 D2PAK-3/2 D2PAK-3/2 D2PAK-3/2
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Factory Lead Time 26 weeks 26 weeks 26 weeks 26 weeks
Other features FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.63 V 0.63 V 0.63 V 0.63 V
JEDEC-95 code TO-263AB TO-263AB TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C
Maximum output current 16 A 16 A 16 A 16 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Maximum repetitive peak reverse voltage 45 V 45 V 35 V 35 V
Maximum reverse current 200 µA 200 µA 200 µA 200 µA
surface mount YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 40 40
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