K7B163625M-TC10 datasheet, PDF

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K7B163625M-TC10: DescriptionCache SRAM, 512KX36, 10ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100; Categorystorage storage; File Size573KB，21 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K7B163625M-TC10 Overview

Cache SRAM, 512KX36, 10ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7B163625M-TC10 Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	QFP
package instruction	LQFP,
Contacts	100
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	10 ns
Other features	SELF-TIMED WRITE CYCLE
JESD-30 code	R-PQFP-G100
length	20 mm
memory density	18874368 bit
Memory IC Type	CACHE SRAM
memory width	36
Number of functions	1
Number of terminals	100
word count	524288 words
character code	512000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX36
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
width	14 mm

K7B163625M-TC10 Related Products

	K7B163625M-TC10	K7B161825M-TC10	K7B161825M-TC85	K7B161825M-TC90	K7B163625M-TC90	K7B163625M-TC85	K7B163625M-HC10	K7B163625M-HC10T	K7B161825M-HC10	K7B161825M-HC10T
Description	Cache SRAM, 512KX36, 10ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100	Cache SRAM, 1MX18, 10ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100	Cache SRAM, 1MX18, 8.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100	Cache SRAM, 1MX18, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100	Cache SRAM, 512KX36, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100	Cache SRAM, 512KX36, 8.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100	Cache SRAM, 512KX36, 10ns, CMOS, PBGA119, BGA-119	Standard SRAM, 512KX36, 10ns, CMOS, PBGA119	Cache SRAM, 1MX18, 10ns, CMOS, PBGA119, BGA-119	Standard SRAM, 1MX18, 10ns, CMOS, PBGA119
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
package instruction	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	10 ns	10 ns	8.5 ns	9 ns	9 ns	8.5 ns	10 ns	10 ns	10 ns	10 ns
JESD-30 code	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119
memory density	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit
Memory IC Type	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	STANDARD SRAM	CACHE SRAM	STANDARD SRAM
memory width	36	18	18	18	36	36	36	36	18	18
Number of terminals	100	100	100	100	100	100	119	119	119	119
word count	524288 words	1048576 words	1048576 words	1048576 words	524288 words	524288 words	524288 words	524288 words	1048576 words	1048576 words
character code	512000	1000000	1000000	1000000	512000	512000	512000	512000	1000000	1000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	512KX36	1MX18	1MX18	1MX18	512KX36	512KX36	512KX36	512KX36	1MX18	1MX18
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	BGA	BGA	BGA	BGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	BALL	BALL	BALL	BALL
Terminal pitch	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Parts packaging code	QFP	QFP	QFP	QFP	QFP	QFP	BGA	-	BGA	-
Contacts	100	100	100	100	100	100	119	-	119	-
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	-	3A991.B.2.A	-
Other features	SELF-TIMED WRITE CYCLE	SELF-TIMED WRITE CYCLE	SELF-TIMED WRITE CYCLE	SELF-TIMED WRITE CYCLE	SELF-TIMED WRITE CYCLE	SELF-TIMED WRITE CYCLE	SELF-TIMED WRITE CYCLE	-	SELF-TIMED WRITE CYCLE	-
length	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	22 mm	-	22 mm	-
Number of functions	1	1	1	1	1	1	1	-	1	-
Maximum seat height	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	-	-	-	-
Maximum supply voltage (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	-	3.465 V	-
Minimum supply voltage (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	-	3.135 V	-
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-	3.3 V	-
width	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	-	14 mm	-

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