HUF76132S3S datasheet, PDF - EEWORLD Datasheet

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HUF76132S3S: Description75A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-236AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size968KB，12 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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HUF76132S3S Overview

75A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-236AB, 3 PIN

HUF76132S3S Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Rochester Electronics
Parts packaging code	D2PAK
package instruction	TO-236AB, 3 PIN
Contacts	3
Reach Compliance Code	unknown
Other features	ULTRA-LOW RESISTANCE
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.016 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	NOT SPECIFIED
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	COMMERCIAL
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

HUF76132S3S Related Products

	HUF76132S3S	HUF76132P3	HUF76132S3ST
Description	75A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-236AB, 3 PIN	75A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN	75A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-236AB, 3 PIN
Maker	Rochester Electronics	Rochester Electronics	Rochester Electronics
Parts packaging code	D2PAK	TO-220AB	D2PAK
package instruction	TO-236AB, 3 PIN	TO-220AB, 3 PIN	TO-236AB, 3 PIN
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
Other features	ULTRA-LOW RESISTANCE	ULTRA-LOW RESISTANCE	ULTRA-LOW RESISTANCE
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V
Maximum drain current (ID)	75 A	75 A	75 A
Maximum drain-source on-resistance	0.016 Ω	0.016 Ω	0.016 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-220AB	TO-263AB
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2
Number of components	1	1	1
Number of terminals	2	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	COMMERCIAL	COMMERCIAL	COMMERCIAL
surface mount	YES	NO	YES
Terminal surface	TIN LEAD	NOT SPECIFIED	NOT SPECIFIED
Terminal form	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Is it lead-free?	Contains lead	-	Lead free
Humidity sensitivity level	NOT SPECIFIED	-	NOT SPECIFIED
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED

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