HUF76132P3 datasheet, PDF - EEWORLD Datasheet

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HUF76132P3: Description75A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN; CategoryThe transistor; File Size968KB，12 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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HUF76132P3 Overview

75A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN

HUF76132P3 Parametric

Parameter Name	Attribute value
Maker	Rochester Electronics
Parts packaging code	TO-220AB
package instruction	TO-220AB, 3 PIN
Contacts	3
Reach Compliance Code	unknown
Other features	ULTRA-LOW RESISTANCE
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.016 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	COMMERCIAL
surface mount	NO
Terminal surface	NOT SPECIFIED
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

HUF76132P3 Related Products

	HUF76132P3	HUF76132S3S	HUF76132S3ST
Description	75A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN	75A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-236AB, 3 PIN	75A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-236AB, 3 PIN
Maker	Rochester Electronics	Rochester Electronics	Rochester Electronics
Parts packaging code	TO-220AB	D2PAK	D2PAK
package instruction	TO-220AB, 3 PIN	TO-236AB, 3 PIN	TO-236AB, 3 PIN
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
Other features	ULTRA-LOW RESISTANCE	ULTRA-LOW RESISTANCE	ULTRA-LOW RESISTANCE
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V
Maximum drain current (ID)	75 A	75 A	75 A
Maximum drain-source on-resistance	0.016 Ω	0.016 Ω	0.016 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-263AB	TO-263AB
JESD-30 code	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1
Number of terminals	3	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	COMMERCIAL	COMMERCIAL	COMMERCIAL
surface mount	NO	YES	YES
Terminal surface	NOT SPECIFIED	TIN LEAD	NOT SPECIFIED
Terminal form	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Is it lead-free?	-	Contains lead	Lead free
Humidity sensitivity level	-	NOT SPECIFIED	NOT SPECIFIED
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED

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