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CP611-CJD42C-WS

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size652KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

CP611-CJD42C-WS Overview

Transistor

CP611-CJD42C-WS Parametric

Parameter NameAttribute value
MakerCentral Semiconductor
package instruction,
Reach Compliance Codecompliant

CP611-CJD42C-WS Preview

PROCESS
Power Transistor
CP611
PNP - Amp/Switch Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GROSS DIE PER 4 INCH WAFER
1,450
PRINCIPAL DEVICE TYPES
CJD42C
TIP42C
EPITAXIAL BASE
80 X 99 MILS
12.5 ± 1 MILS
12 X 32 MILS
13 X 46 MILS
Al - 50,000Å
Cr/Ni/Ag - 16,000Å
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R4 (21-August 2006)
PROCESS
CP611
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R4 (21-August 2006)

CP611-CJD42C-WS Related Products

CP611-CJD42C-WS CP611-TIP42C-WN CP611-TIP42C-WS CP611-CJD42C-WN CP611-CJD42C-CM CP611-CJD42C-CT CP611-TIP42C-CT
Description Transistor Transistor Transistor Transistor Transistor Transistor Transistor
Maker Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
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