PROCESS
Power Transistor
CP611
PNP - Amp/Switch Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GROSS DIE PER 4 INCH WAFER
1,450
PRINCIPAL DEVICE TYPES
CJD42C
TIP42C
EPITAXIAL BASE
80 X 99 MILS
12.5 ± 1 MILS
12 X 32 MILS
13 X 46 MILS
Al - 50,000Å
Cr/Ni/Ag - 16,000Å
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R4 (21-August 2006)
PROCESS
CP611
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R4 (21-August 2006)