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U635H256BDK25G1

Description
32KX8 NON-VOLATILE SRAM, 25ns, PDIP28, 0.300 INCH, PLASTIC, DIP-28
Categorystorage    storage   
File Size203KB,13 Pages
ManufacturerCypress Semiconductor
Environmental Compliance  
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U635H256BDK25G1 Overview

32KX8 NON-VOLATILE SRAM, 25ns, PDIP28, 0.300 INCH, PLASTIC, DIP-28

U635H256BDK25G1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerCypress Semiconductor
Parts packaging codeDIP
package instructionDIP,
Contacts28
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time25 ns
JESD-30 codeR-PDIP-T28
JESD-609 codee3
length34.7 mm
memory density262144 bit
Memory IC TypeNON-VOLATILE SRAM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32KX8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height5.1 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
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