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RF3146A

Description
Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, 2 Func, 7 X 7 MM, 0.90 MM HEIGHT, LFM, 48 PIN
CategoryWireless rf/communication    Radio frequency and microwave   
File Size261KB,16 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Download Datasheet Parametric Compare View All

RF3146A Overview

Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, 2 Func, 7 X 7 MM, 0.90 MM HEIGHT, LFM, 48 PIN

RF3146A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerQorvo
package instructionLCC48,.27SQ,20
Reach Compliance Codecompliant
Other featuresIT CAN ALSO OPERATE AT 1850 TO 1910 MHZ
Characteristic impedance50 Ω
structureCOMPONENT
Maximum input power (CW)10 dBm
JESD-609 codee0
Installation featuresSURFACE MOUNT
Number of functions2
Number of terminals48
Maximum operating frequency849 MHz
Minimum operating frequency824 MHz
Maximum operating temperature85 °C
Minimum operating temperature-20 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeLCC48,.27SQ,20
power supply3.5 V
RF/Microwave Device TypesNARROW BAND MEDIUM POWER
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage standing wave ratio2.5

RF3146A Preview

RF3146A
0
RoHS Compliant & Pb-Free Product
Typical Applications
• 3V Dual-Band GSM Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
Product Description
The RF3146A is a high-power, high-efficiency power
amplifier module with integrated power control. The
device is a self-contained 7mmx7mmx0.9mm lead
frame module (LFM) with 50Ω input and output terminals.
The power control function is also incorporated, eliminat-
ing the need for directional couplers, detector diodes,
power control ASICs and other power control circuitry;
this allows the module to be driven directly from the DAC
output. The device is designed for use as the final RF
amplifier in GSM850, and PCS handheld digital cellular
equipment and other applications in the 824MHz to
849MHz, and 1850MHz to 1910MHz bands. On-board
power control provides over 50dB of control range with an
analog voltage input; and, power down with a logic “low”
for standby operation.
DUAL-BAND GSM850/PCS
POWER AMP MODULE
• GSM850/PCS Products
• GPRS Class 12 Compatible
• Power Star
TM
Module
-A-
7.00 TYP
6.75 TYP
0.10 C A
2 PLCS
0.08 C
0.70
0.65
0.10 C B
2 PLCS
0.90
0.85
0.05
0.00
2 PLCS
0.10 C B
-B-
2 PLCS
0.10 C A
3.37 TYP
3.50 TYP
Dimensions in mm.
-C-
SEATING
PLANE
0.10M C A B
0.60
TYP
0.24
0.60
TYP
0.24
Shaded lead is pin 1.
0.30
0.18
0.50
2.20
1.90
0.30
0.50
TYP
0.30
5.25
4.95
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: LFM, 48-Pin, 7mm x7mmx0.9mm
Features
• Integrated V
REG
• Complete Power Control Solution
• +35dBm GSM Output Power at 3.5V
PCS IN 37
BAND SELECT 40
TX ENABLE 41
VBATT 42
VBATT 43
VRAMP 45
GSM IN 48
Fully Integrated
Power Control Circuit
31 PCS OUT
• +33dBm PCS Output Power at 3.5V
• 60% GSM and 55% PCS
EFF
• 7mmx7mmx0.9mm Package Size
Ordering Information
6 GSM OUT
RF3146A
Dual-Band GSM850/PCS Power Amp Module
RF3146A SB
Power Amp Module 5-Piece Sample Pack
RF3146APCBA-41X Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A3 051011
2-491
RF3146A
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (V
RAMP
)
Input RF Power
Max Duty Cycle
Output Load VSWR
Operating Case Temperature
Storage Temperature
Rating
-0.3 to +6.0
-0.3 to +1.8
+10
50
10:1
-20 to +85
-55 to +150
Unit
V
DC
V
dBm
%
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall Power Control
V
RAMP
Power Control “ON”
Power Control “OFF”
V
RAMP
Input Capacitance
V
RAMP
Input Current
Turn On/Off Time
TX Enable “ON”
TX Enable “OFF”
GSM Band Enable
PCS Band Enable
Specification
Min.
Typ.
Max.
Unit
Condition
0.2
15
1.5
0.25
20
10
2
0.5
0.5
1.5
1.9
3.0
3.5
1
5.5
V
V
pF
μA
μs
V
V
V
V
V
V
μA
mA
Max. P
OUT
, Voltage supplied to the input
Min. P
OUT
, Voltage supplied to the input
DC to 2MHz
V
RAMP
=V
RAMP MAX
V
RAMP
=0.2V to V
RAMP MAX
Overall Power Supply
Power Supply Voltage
Power Supply Current
Specifications
Nominal operating limits
P
IN
<-30dBm, TX Enable=Low,
Temp=-20°C to +85°C
V
RAMP
=0.2V, TX Enable=High
Overall Control Signals
Band Select “Low”
Band Select “High”
Band Select “High” Current
TX Enable “Low”
TX Enable “High”
TX Enable “High” Current
0
1.9
0
1.5
0
2.0
20
0
2.0
1
0.5
3.0
50
0.5
3.0
2
V
V
μA
V
V
μA
2-492
Rev A3 051011
RF3146A
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Temp=+25 °C, V
BATT
=3.5V,
V
RAMP
=V
RAMP MAX
, P
IN
=3dBm,
Freq=824MHz to 849MHz,
25% Duty Cycle, Pulse Width=1154μs
824 to 849
+34.2
+32.0
Total Efficiency
Input Power Range
Output Noise Power
Forward Isolation 1
Forward Isolation 2
Cross Band Isolation at 2f
0
Second Harmonic
Third Harmonic
All Other
Non-Harmonic Spurious
Input Impedance
Input VSWR
Output Load VSWR Stability
47
0
55
+3
-88
-50
-35
-15
-25
MHz
dBm
dBm
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Ω
2.5:1
8:1
V
RAMP
=0.2V to V
RAMP MAX
Spurious<-36dBm, RBW=3MHz
Set V
RAMP
where P
OUT
<34.2dBm into 50Ω
load
Set V
RAMP
where P
OUT
<34.2dBm into 50Ω
load. No damage or permanent degradation
to part.
Load impedance presented at RF OUT pad
V
RAMP
=0.2V to V
RAMP MAX
Temp = 25°C, V
BATT
=3.5V,
V
RAMP
=V
RAMP MAX
Temp=+85 °C, V
BATT
=3.0V,
V
RAMP
=V
RAMP MAX
At P
OUT MAX
, V
BATT
=3.5V
Maximum output power guaranteed at mini-
mum drive level
RBW=100kHz, 869MHz to 894MHz,
P
OUT
> +5dBm
TXEnable=Low, P
IN
=+5dBm
TXEnable=High, P
IN
=+5dBm, V
RAMP
=0.2V
V
RAMP
=0.2V to V
RAMP
_R
P
V
RAMP
=0.2V to V
RAMP
_R
P
V
RAMP
=0.2V to V
RAMP
_R
P
V
RAMP
=0.2V to V
RAMP MAX
Overall (GSM850 Mode)
Operating Frequency Range
Maximum Output Power
+5
-81
-35
-15
-18
-7
-15
-36
50
Output Load VSWR Ruggedness
10:1
Output Load Impedance
50
Ω
dB
Power Control V
RAMP
Power Control Range
55
Notes:
V
RAMP MAX
=0.4*V
BATT
+0.06<1.5V
V
RAMP
_R
P
=V
RAMP
set for 34.2dBm at nominal conditions.
Rev A3 051011
2-493
RF3146A
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Temp=25°C, V
BATT
=3.5V,
V
RAMP
=V
RAMP MAX
, P
IN
=3dBm,
Freq=1850MHz to 1910MHz,
25% Duty Cycle, pulse width=1154μs
1850 to 1910
+32.0
30
Total Efficiency
Input Power Range
Output Noise Power
Forward Isolation 1
Forward Isolation 2
Second Harmonic
Third Harmonic
All Other
Non-Harmonic Spurious
Input Impedance
Input VSWR
Output Load VSWR Stability
48
0
55
+3
-85
-40
-20
-15
-20
MHz
dBm
dBm
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Ω
2.5:1
8:1
V
RAMP
=0.2V to V
RAMP MAX
Spurious<-36dBm, RBW=3MHz
Set V
RAMP
where P
OUT
<32.0dBm into 50Ω
load
Set V
RAMP
where P
OUT
<32.0dBm into 50Ω
load. No damage or permanent degradation
to part.
Load impedance presented at RF OUT pin
V
RAMP
=0.2V to V
RAMP MAX
, P
IN
=+5dBm
Temp=25°C, V
BATT
=3.5V,
V
RAMP
=V
RAMP MAX
, 1850MHz to 1910MHz
Temp=+85°C, V
BATT
=3.0V,
V
RAMP
=V
RAMP MAX
At P
OUT MAX,
V
BATT
=3.5V
Full output power guaranteed at minimum
drive level
RBW=100kHz, 1930MHz to 1990MHz,
P
OUT
> 0dBm, V
BATT
=3.5V
TX_ENABLE=Low, P
IN
=+5dBm
TXEnable=High, V
RAMP
=0.2V, P
IN
=+5dBm
V
RAMP
=0.2V to V
RAMP
_R
P
V
RAMP
=0.2V to V
RAMP
_R
P
V
RAMP
=0.2V to V
RAMP MAX
Overall (PCS Mode)
Operating Frequency Range
Maximum Output Power
+5
-80
-33
-15
-7
-15
-36
50
Output Load VSWR Ruggedness
10:1
Output Load Impedance
50
Ω
dB
Power Control V
RAMP
Power Control Range
50
Notes:
V
RAMP MAX
=0.4*V
BATT
+0.06<1.5V
V
RAMP
_R
P
=V
RAMP
set for 32.0dBm at nominal conditions.
2-494
Rev A3 051011
RF3146A
Pin
1
2
Function Description
Interface Schematic
Internal circuit node. Do not externally connect.
NC
VCC2 GSM
Controlled voltage input to the GSM driver stage. This voltage is part of
VCC2
the power control function for the module. This node must be con-
nected to VCC OUT. This pin should be externally decoupled.
3
4
5
6
NC
GND
GND
GSM850
OUT
Internal circuit node. Do not externally connect.
Internally connected to the package base.
Internally connected to the package base.
RF output for the GSM850 band. This is a 50Ω output. The output
matching circuit and DC-block are internal to the package.
VCC3
Output
Match
RF OUT
7
8
9
10
11
12
13
14
15
16
17
18
GND
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
VCC3 GSM
Internally connected to the package base.
Internal circuit node. Do not externally connect.
Internal circuit node. Do not externally connect.
Internal circuit node. Do not externally connect.
Internal circuit node. Do not externally connect.
Internal circuit node. Do not externally connect.
No internal or external connection.
Internal circuit node. Do not externally connect.
Internal circuit node. Do not externally connect.
Internal circuit node. Do not externally connect.
Internal circuit node. Do not externally connect.
Controlled voltage input to the GSM output stage. This voltage is part of
the power control function for the module. This node must be con-
nected to VCC OUT. This pin should be externally decoupled.
VCC3
19
20
21
22
23
24
25
26
27
28
29
30
VCC OUT
VCC OUT
VCC3 PCS
NC
NC
NC
NC
NC
NC
NC
NC
GND
Controlled voltage output to feed VCC2 and VCC3. This voltage is part
of the power control function for the module. It cannot be connected to
any pins other than VCC2 and VCC3.
Controlled voltage output to feed VCC2 and VCC3. This voltage is part
of the power control function for the module. It cannot be connected to
any pins other than VCC2 and VCC3.
Controlled voltage input to the PCS output stage. This voltage is part of
the power control function for the module. This node must be con-
nected to VCC OUT. This pin should be externally decoupled.
Internal circuit node. Do not externally connect.
Internal circuit node. Do not externally connect.
No internal or external connection.
Internal circuit node. Do not externally connect.
Internal circuit node. Do not externally connect.
Internal circuit node. Do not externally connect.
Internal circuit node. Do not externally connect.
Internal circuit node. Do not externally connect.
Internally connected to the package base.
See pin 18.
Rev A3 051011
2-495

RF3146A Related Products

RF3146A RF3146ASB
Description Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, 2 Func, 7 X 7 MM, 0.90 MM HEIGHT, LFM, 48 PIN Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, 2 Func, 7 X 7 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, LFM, 48 PIN
Is it Rohs certified? incompatible conform to
Maker Qorvo Qorvo
package instruction LCC48,.27SQ,20 LCC48,.27SQ,20
Reach Compliance Code compliant compliant
Other features IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Maximum input power (CW) 10 dBm 10 dBm
Installation features SURFACE MOUNT SURFACE MOUNT
Number of functions 2 2
Number of terminals 48 48
Maximum operating frequency 849 MHz 849 MHz
Minimum operating frequency 824 MHz 824 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -20 °C -20 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Encapsulate equivalent code LCC48,.27SQ,20 LCC48,.27SQ,20
power supply 3.5 V 3.5 V
RF/Microwave Device Types NARROW BAND MEDIUM POWER NARROW BAND MEDIUM POWER
surface mount YES YES
Maximum voltage standing wave ratio 2.5 2.5
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