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IXGE50N60Z

Description
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES
CategoryDiscrete semiconductor    The transistor   
File Size525KB,6 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

IXGE50N60Z Overview

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES

IXGE50N60Z Parametric

Parameter NameAttribute value
MakerIXYS
Reach Compliance Codecompliant
Maximum collector current (IC)50 A
Collector-emitter maximum voltage600 V
Number of components1
Maximum power dissipation(Abs)200 W
VCEsat-Max3 V

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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