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W29C020CP12B

Description
256K X 8 CMOS FLASH MEMORY
Categorystorage    storage   
File Size309KB,22 Pages
ManufacturerWinbond Electronics Corporation
Websitehttp://www.winbond.com.tw
Download Datasheet Parametric Compare View All

W29C020CP12B Overview

256K X 8 CMOS FLASH MEMORY

W29C020CP12B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWinbond Electronics Corporation
Parts packaging codeQFJ
package instructionQCCJ, LDCC32,.5X.6
Contacts32
Reach Compliance Code_compli
ECCN codeEAR99
Maximum access time120 ns
Other featuresHARDWARE AND SOFTWARE DATA PROTECTION; 20-YEARS DATA RETENTION
startup blockBOTTOM/TOP
command user interfaceNO
Data pollingYES
Data retention time - minimum20
Durability10000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
JESD-609 codee0
length13.97 mm
memory density2097152 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size1,1,1
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height3.56 mm
Department size8K,240K,8K
Maximum standby current0.0001 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
switch bitYES
typeNOR TYPE
width11.43 mm
Maximum write cycle time (tWC)10 ms

W29C020CP12B Related Products

W29C020CP12B W29C020CT70B W29C020CT12B W29C020CP70B W29C020C-90 W29C020C
Description 256K X 8 CMOS FLASH MEMORY 256K X 8 CMOS FLASH MEMORY 256K X 8 CMOS FLASH MEMORY 256K X 8 CMOS FLASH MEMORY 256K X 8 CMOS FLASH MEMORY 256K X 8 CMOS FLASH MEMORY
Is it Rohs certified? incompatible incompatible incompatible incompatible - -
Maker Winbond Electronics Corporation Winbond Electronics Corporation Winbond Electronics Corporation Winbond Electronics Corporation - -
Parts packaging code QFJ TSOP1 TSOP1 QFJ - -
package instruction QCCJ, LDCC32,.5X.6 TSOP1, TSSOP32,.8,20 TSOP1, TSSOP32,.8,20 QCCJ, LDCC32,.5X.6 - -
Contacts 32 32 32 32 - -
Reach Compliance Code _compli _compli _compli _compli - -
ECCN code EAR99 EAR99 EAR99 EAR99 - -
Maximum access time 120 ns 70 ns 120 ns 70 ns - -
Other features HARDWARE AND SOFTWARE DATA PROTECTION; 20-YEARS DATA RETENTION HARDWARE AND SOFTWARE DATA PROTECTION; 20-YEARS DATA RETENTION HARDWARE AND SOFTWARE DATA PROTECTION; 20-YEARS DATA RETENTION HARDWARE AND SOFTWARE DATA PROTECTION; 20-YEARS DATA RETENTION - -
startup block BOTTOM/TOP BOTTOM/TOP BOTTOM/TOP BOTTOM/TOP - -
command user interface NO NO NO NO - -
Data polling YES YES YES YES - -
Data retention time - minimum 20 20 20 20 - -
Durability 10000 Write/Erase Cycles 10000 Write/Erase Cycles 10000 Write/Erase Cycles 10000 Write/Erase Cycles - -
JESD-30 code R-PQCC-J32 R-PDSO-G32 R-PDSO-G32 R-PQCC-J32 - -
JESD-609 code e0 e0 e0 e0 - -
length 13.97 mm 18.4 mm 18.4 mm 13.97 mm - -
memory density 2097152 bi 2097152 bi 2097152 bi 2097152 bi - -
Memory IC Type FLASH FLASH FLASH FLASH - -
memory width 8 8 8 8 - -
Number of functions 1 1 1 1 - -
Number of departments/size 1,1,1 1,1,1 1,1,1 1,1,1 - -
Number of terminals 32 32 32 32 - -
word count 262144 words 262144 words 262144 words 262144 words - -
character code 256000 256000 256000 256000 - -
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - -
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C - -
organize 256KX8 256KX8 256KX8 256KX8 - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
encapsulated code QCCJ TSOP1 TSOP1 QCCJ - -
Encapsulate equivalent code LDCC32,.5X.6 TSSOP32,.8,20 TSSOP32,.8,20 LDCC32,.5X.6 - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - -
Package form CHIP CARRIER SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE CHIP CARRIER - -
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL - -
Peak Reflow Temperature (Celsius) 225 240 240 225 - -
power supply 5 V 5 V 5 V 5 V - -
Programming voltage 5 V 5 V 5 V 5 V - -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - -
Maximum seat height 3.56 mm 1.2 mm 1.2 mm 3.56 mm - -
Department size 8K,240K,8K 8K,240K,8K 8K,240K,8K 8K,240K,8K - -
Maximum standby current 0.0001 A 0.0001 A 0.0001 A 0.0001 A - -
Maximum slew rate 0.05 mA 0.05 mA 0.05 mA 0.05 mA - -
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V - -
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V - -
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V - -
surface mount YES YES YES YES - -
technology CMOS CMOS CMOS CMOS - -
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL - -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - -
Terminal form J BEND GULL WING GULL WING J BEND - -
Terminal pitch 1.27 mm 0.5 mm 0.5 mm 1.27 mm - -
Terminal location QUAD DUAL DUAL QUAD - -
Maximum time at peak reflow temperature 30 30 30 30 - -
switch bit YES YES YES YES - -
type NOR TYPE NOR TYPE NOR TYPE NOR TYPE - -
width 11.43 mm 8 mm 8 mm 11.43 mm - -
Maximum write cycle time (tWC) 10 ms 10 ms 10 ms 10 ms - -
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