DM2200J1-15L datasheet, PDF - EEWORLD Datasheet

DM2200J1-15L: DescriptionCache DRAM, 4MX1, 35ns, MOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28; Categorystorage storage; File Size150KB，18 Pages; ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation); Websitehttp://www.cypress.com/

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DM2200J1-15L Overview

Cache DRAM, 4MX1, 35ns, MOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Ramtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging code	SOJ
package instruction	SOJ, SOJ28,.34
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE/STATIC COLUMN
Maximum access time	35 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 2K X 1 SRAM
I/O type	SEPARATE
JESD-30 code	R-PDSO-J28
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	CACHE DRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	28
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ28,.34
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	1024
self refresh	YES
Maximum standby current	0.001 A
Maximum slew rate	0.18 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	MOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL

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