SSTTIS93T216 datasheet, PDF - EEWORLD Datasheet

SSTTIS93T216: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, SST, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size207KB，6 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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SSTTIS93T216 Overview

Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, SST, 3 PIN

Parameter Name	Attribute value
Maker	ROHM Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-based maximum capacity	7 pF
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	255 ns
Maximum opening time (tons)	35 ns
VCEsat-Max	0.25 V

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