2SC4871-4 datasheet, PDF - EEWORLD Datasheet

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2SC4871-4: DescriptionRF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN, MCP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size65KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SC4871-4 Overview

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN, MCP, 3 PIN

2SC4871-4 Parametric

Parameter Name	Attribute value
Objectid	1544600606
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.02 A
Collector-based maximum capacity	0.7 pF
Collector-emitter maximum voltage	8 V
Configuration	SINGLE
Minimum DC current gain (hFE)	90
highest frequency band	S BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.1 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	10000 MHz

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Ordering number:ENN4857

NPN Epitaxial Planar Silicon Transistor

2SC4871

UHF to S Band Low-Noise Amplifier,

OSC Applications

Features

· High cutoff frequency : f

=10GHz typ.

· High gain :

⏐S21e⏐

=13dB typ (f=1GHz).

· Low noise : NF=1.3dB typ (f=1GHz).

· Small Cob : Cob=0.4pF typ.

Package Dimensions

unit:mm

2059B

[2SC4871]

0.425

0.3

0 to 0.1

1.250

2.1

0.2

0.6

0.9

0.15

0.425

0.65 0.65

2.0

0.3

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

Tstg

Conditions

1 : Base

2 : Emitter

3 : Collector

SANYO : MCP

Ratings

1.5

100

150

–55 to +150

Unit

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Forward Transfer Gain

Noise Figure

Symbol

ICBO

IEBO

hFE

Cob

| S21e

VCB=10V, IE=0

VEB=1V, IC=0

VCE=5V, IC=4mA

VCB=10V, f=1MHz

VCE=5V, IC=7mA, f=1GHz

VCE=5V, IC=4mA, f=1GHz

60*

0 .4

1.3

2.8

0.7

Conditions

Ratings

min

typ

max

1.0

270*

GHz

Unit

* : The 2SC4871 is classified by 4mA h

as follows :

Marking : HN

rank : 3, 4, 5

Rank

hFE

60 to 120

90 to 180

135 to 270

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

21005TN (PC)/12599HA (KT)/41095TS (KOTO) TA-0078 No.4857–1/4

2SC4871-4 Related Products

	2SC4871-4	2SC4871-3	2SC4871-5	2SC4871-TL
Description	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN, MCP, 3 PIN	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN, MCP, 3 PIN	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN, MCP, 3 PIN	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN, MCP, 3 PIN
Objectid	1544600606	1544600605	1544600607	1417104631
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.02 A	0.02 A	0.02 A	0.02 A
Collector-based maximum capacity	0.7 pF	0.7 pF	0.7 pF	0.7 pF
Collector-emitter maximum voltage	8 V	8 V	8 V	8 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	S BAND	S BAND	S BAND	S BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	10000 MHz	10000 MHz	10000 MHz	10000 MHz
Minimum DC current gain (hFE)	90	60	135	-
Maximum operating temperature	150 °C	150 °C	150 °C	-
Maximum power dissipation(Abs)	0.1 W	0.1 W	0.1 W	-

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