Ordering number:ENN4857
NPN Epitaxial Planar Silicon Transistor
2SC4871
UHF to S Band Low-Noise Amplifier,
OSC Applications
Features
· High cutoff frequency : f
T
=10GHz typ.
· High gain :
⏐S21e⏐
2
=13dB typ (f=1GHz).
· Low noise : NF=1.3dB typ (f=1GHz).
· Small Cob : Cob=0.4pF typ.
Package Dimensions
unit:mm
2059B
[2SC4871]
0.425
0.3
3
0 to 0.1
1.250
2.1
0.2
0.6
0.9
0.15
0.425
1
2
0.65 0.65
2.0
0.3
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
Ratings
16
8
1.5
20
100
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT
Cob
| S21e
NF
|
2
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=4mA
VCE=5V, IC=4mA
VCB=10V, f=1MHz
VCE=5V, IC=7mA, f=1GHz
VCE=5V, IC=4mA, f=1GHz
10
60*
10
0 .4
13
1.3
2.8
0.7
Conditions
Ratings
min
typ
max
1.0
10
270*
GHz
pF
dB
dB
Unit
μ
A
μ
A
* : The 2SC4871 is classified by 4mA h
FE
as follows :
Marking : HN
h
FE
rank : 3, 4, 5
Rank
hFE
3
60 to 120
4
90 to 180
5
135 to 270
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21005TN (PC)/12599HA (KT)/41095TS (KOTO) TA-0078 No.4857–1/4
2SC4871
3
2
hFE -- IC
VCE=5V
2
fT -- IC
VCE=5V
Gain-Bandwidth Product, fT – GHz
10
7
5
3
2
DC Current Gain, hFE
100
7
5
3
2
1.0
7
5
3
10
7
5
0.1
2
3
5 7 1.0
2
3
5
7
10
2
3
5
3
5
7
1.0
2
3
5
7
10
2
3
Collector Current, IC – mA
5
3
ITR07697
5
Collector Current, IC – mA
ITR07698
Cob -- VCB
Reverse Transfer Capacitance, Cre – pF
f=1MHz
Cre -- VCB
f=1MHz
3
2
Output Capacitance, Cob – pF
2
1.0
7
5
3
2
1.0
7
5
3
2
0.1
7
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
0.1
7
5
7 0.1
2
3
5 7
1.0
2
3
5
7 10
2
3
5
Collector-to-Base Voltage, VCB – V
16
2
⏐S21e⏐
-- IC
ITR07699
10
Collector-to-Base Voltage, VCB – V
ITR07700
NF -- IC
VCE=5V
f=1GHz
Forward Transfer Gain,
⏐S21e⏐
– dB
14
12
10
8
6
4
2
0
VCE=5V
f=1GHz
8
2
Noise Figure, NF – dB
6
4
2
2
3
5
7 1.0
2
3
5
7
10
2
3
5
0
5
7
Collector Current, IC – mA
120
1.0
2
3
5
7
ITR07701
Collector Current, IC – mA
10
2
3
ITR07702
PC -- Ta
Collector Dissipation, P
C
– mW
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR07703
No.4857–2/4
2SC4871
S parameter
f=200MHz to 2000MHz(200MHz Step)
j50
j25
120
°
j100
j150
j10
j200
j250
f=200MHz to 2000MHz(200MHz Step)
90
°
Hz
0.2G
°
150
V
IC CE =5
=7 V
mA
2.0G
60
°
V
=5
E mA
VC 2
I C=
GH
z
0.2
30
°
Hz
2.0
GH
0
10
25
50 100
150 250
z
±180°
2
4
6
8 10
0
--j10
VC
E=
z
IC =7 5V
mA
0.2GH
0.2
GH
z
2.0G
Hz
2.0
GH
z
VCE =5
V
IC =2m
A
--j250
--j200
--j150
--150
°
--30
°
--j25
--j50
--j100
--120
°
ITR07704
--60
°
--90
°
ITR07705
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
90
°
120
°
60
°
f=200MHz to 2000MHz(200MHz Step)
j50
Hz
2.
0G
Hz
V
C
IC = E =5V
7m
A
j25
30
°
j10
j100
j150
j200
j250
150
°
0.2
GH
0.2
z
GH
z
V
=5
E mA
VC 2
=
IC
2.0
G
--j10
--150
°
--30
°
--j250
--j200
2.0GHz
VCE=5V
IC=2mA
--j150
2.
0G
H
VCE=5V
IC=7mA
--j25
--120
°
--90
°
--60
°
ITR07706
--j100
--j50
0.2
0.2
GHz
GH
z
ITR07707
±180°
0.04 0.08 0.12 0.16 0.2
0
0
10
25
50
100
150
250
z
No.4857–3/4
2SC4871
S parameter
(Common emitter)
V
CE
=5V, I
C
=2mA, Z
O
=50Ω
Freq (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
| S11 |
0.912
0.835
0.742
0.649
0.578
0.512
0.445
0.400
0.359
0.319
∠S
11
— 7.6
1
— 3.0
3
— 6. 9
4
— 8.9
5
— 8.7
6
— 8.1
7
— 6.3
8
— 3.0
9
— 8. 5
9
— 06.6
1
| S21 |
5.764
5.282
4.753
4.268
3.840
3.440
3.123
2.836
2.588
2.397
∠S
21
161.5
145.5
131.2
119.4
109.4
100.5
92.5
85.2
79.0
73.0
| S12 |
0.034
0.065
0.088
0.107
0.121
0.134
0.145
0.154
0.164
0.174
∠S
12
79.0
69.9
62.8
57.9
54.5
52.2
50.3
49.2
48.4
47.9
| S22 |
0.974
0.919
0.850
0.789
0.740
0.698
0.664
0.638
0.615
0.601
∠S
22
— 0.3
1
— 9.2
1
— 6.3
2
— 1.6
3
— 5.5
3
— 8.9
3
— 1.6
4
— 4.3
4
— 6.3
4
— 8.3
4
V
CE
=5V, I
C
=7mA, Z
O
=50Ω
Freq (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
| S11 |
0.721
0.555
0.428
0.344
0.291
0.254
0.221
0.197
0.178
0.171
∠S
11
— 5.1
3
— 9.9
5
— 7.5
7
— 9. 9
8
— 00.6
1
— 10.9
1
— 21.4
1
— 28.9
1
— 36.7
1
— 48.6
1
| S21 |
12.262
9.445
7.290
5.877
4.911
4.223
3.703
3.294
3.946
2.692
∠S
21
147.1
124.9
110.2
100.1
92.1
85.1
79.0
73.6
68.5
63.8
| S12 |
0.030
0.050
0.065
0.078
0.091
0.104
0.117
0.129
0.143
0.157
∠S
12
72.8
64.4
61.9
61.5
61.7
61.5
61.6
61.6
61.1
60.7
| S22 |
0.900
0.763
0.666
0.611
0.583
0.563
0.551
0.540
0.530
0.529
∠S
22
— 6.9
1
— 5.6
2
— 9.3
2
— 1.1
3
— 2.5
3
— 4.1
3
— 5.7
3
— 7.8
3
— 9.7
3
— 1.7
4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2005. Specifications and information herein are subject
to change without notice.
PS No.4857–4/4
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