PDTC123JT,215 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> PDTC123JT,215

PDTC123JT,215: Description100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB; CategoryDiscrete semiconductor The transistor; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

Download Datasheet Parametric Compare View All

PDTC123JT,215 Overview

100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

PDTC123JT,215 Parametric

Parameter Name	Attribute value
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Parts packaging code	TO-236
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	SOT23
Reach Compliance Code	compli
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 21.36
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	3.5 pF
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	0.25 W
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	0.3 V
Base Number Matches	1

Preview

Download Datasheet

View All

PDTC123J series

NPN resistor-equipped transistors;

R1 = 2.2 k, R2 = 47 k

Rev. 7 — 21 December 2011

Product data sheet

1. Product profile

1.1 General description

NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD)

plastic packages.

Table 1.

Product overview

Package

NXP

PDTC123JE

PDTC123JM

PDTC123JT

PDTC123JU

SOT416

SOT883

SOT23

SOT323

JEITA

SC-75

SC-101

SC-70

JEDEC

PNP

complement

PDTA123JE

PDTA123JM

PDTA123JU

Package

configuration

ultra small

leadless ultra small

small

very small

Type number

TO-236AB PDTA123JT

1.2 Features and benefits



100 mA output current capability



Built-in bias resistors



Simplifies circuit design



Reduces component count



Reduces pick and place costs



AEC-Q101 qualified

1.3 Applications



Digital application in automotive and

industrial segments



Control of IC inputs



Cost-saving alternative for BC847/857

series in digital applications



Switching loads

1.4 Quick reference data

Table 2.

Symbol

CEO

R2/R1

Quick reference data

Parameter

collector-emitter voltage

output current

bias resistor 1 (input)

bias resistor ratio

Conditions

open base

Min

1.54

Typ

2.20

Max

100

2.86

Unit

k

PDTC123JT,215 Related Products

	PDTC123JT,215	PDTC123JU,115	PDTC123JM,315	PDTC123JT,235
Description	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Brand Name	NXP Semiconduc	NXP Semiconduc	NXP Semiconductor	NXP Semiconduc
Is it Rohs certified?	conform to	conform to	conform to	conform to
Parts packaging code	TO-236	SC-70	DFN	TO-236
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	1.0 X 0.6 MM, 0.5 MM HEIGHT, ULTRA SMALL, PLASTIC, SMD, SC-101, 3 PIN	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3
Manufacturer packaging code	SOT23	SOT323	SOT883	SOT23
Reach Compliance Code	compli	compli	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 21.36	BUILT-IN BIAS RESISTOR RATIO IS 21.37	BUILT-IN BIAS RESISTOR RATIO IS 21.36	BUILT-IN BIAS RESISTOR RATIO IS 21.36
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	100	100	100
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PBCC-N3	R-PDSO-G3
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	CHIP CARRIER	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	NOT SPECIFIED	260
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.25 W	0.2 W	0.25 W	0.25 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING	NO LEAD	GULL WING
Terminal location	DUAL	DUAL	BOTTOM	DUAL
Maximum time at peak reflow temperature	40	40	NOT SPECIFIED	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

Recommended Resources

Multi-channel patrol detection control circuit b

External grid power supply and self-generated power supply conversion circuit

Night telephone service light circuit (1)

5V-USB charger circuit diagram

Car battery charger circuit diagram

Flash adds automatic dimming function

27 "Ten Thousand Miles" Raspberry Pi Car - Fix and Get the Raspberry Pi IP Address: [i=s]This post was last edited by lb8820265 on 2022-3-20 10:05[/i]The Raspberry Pi car is controlled by the UDP communication protocol of the mobile phone, which means that the IP address of the car n...; lb8820265 Innovation Lab

Design principles, network structure and parameter selection of DC power supply EMI filter: 1 Design principle - To meet the maximum impedance mismatch, the insertion loss should be increased as much as possible, that is, the reflection of the signal should be increased as much as possible. ...; zbz0529 Power technology

GD32F305 CAN debugging failed: The cache cannot be released, and there is no waveform on the CAN chip. What is the reason?...; cheche1025 GD32 MCU

[Xianji HPM6750 Review] Simple unboxing and data download: At the end of last year, I saw news about HPM6750 on the Internet, and remembered two key pieces of information at the time - RISC-V core and a main frequency of up to 800MHz. Therefore, when I learne...; xusiwei1236 Domestic Chip Exchange

Why do electrolytic capacitors explode? How to avoid it?: [align=left][color=rgb(34, 34, 34)][font="]Electrolytic capacitors contain electrodes, dielectric materials, and electrolytes. Based on their structure and possible working conditions, the causes of e...; tiankai001 Analog electronics

Share a virtual oscilloscope HANTEK6022BE plug-in I wrote myself. If you have a HANTEK6022BE that is gathering dust, you can use it.: [i=s]This post was last edited by Haoyu HY on 2022-4-7 23:52[/i]This is a plug-in I wrote when I just bought HANTEK6022BE many years ago. To be honest, this oscilloscope is just like a toy. The bandwi...; 皓禹HY Test/Measurement

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components