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PDTC123JU,115

Description
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PDTC123JU,115 Overview

100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

PDTC123JU,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeSOT323
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 21.37
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PDTC123J series
NPN resistor-equipped transistors;
R1 = 2.2 k, R2 = 47 k
Rev. 7 — 21 December 2011
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
NXP
PDTC123JE
PDTC123JM
PDTC123JT
PDTC123JU
SOT416
SOT883
SOT23
SOT323
JEITA
SC-75
SC-101
-
SC-70
JEDEC
-
-
-
PNP
complement
PDTA123JE
PDTA123JM
PDTA123JU
Package
configuration
ultra small
leadless ultra small
small
very small
Type number
TO-236AB PDTA123JT
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1.3 Applications
Digital application in automotive and
industrial segments
Control of IC inputs
Cost-saving alternative for BC847/857
series in digital applications
Switching loads
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
1.54
17
Typ
-
-
2.20
21
Max
50
100
2.86
26
Unit
V
mA
k

PDTC123JU,115 Related Products

PDTC123JU,115 PDTC123JM,315 PDTC123JT,215 PDTC123JT,235
Description 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Brand Name NXP Semiconduc NXP Semiconductor NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to conform to conform to
Parts packaging code SC-70 DFN TO-236 TO-236
package instruction SMALL OUTLINE, R-PDSO-G3 1.0 X 0.6 MM, 0.5 MM HEIGHT, ULTRA SMALL, PLASTIC, SMD, SC-101, 3 PIN SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3
Manufacturer packaging code SOT323 SOT883 SOT23 SOT23
Reach Compliance Code compli compliant compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 21.37 BUILT-IN BIAS RESISTOR RATIO IS 21.36 BUILT-IN BIAS RESISTOR RATIO IS 21.36 BUILT-IN BIAS RESISTOR RATIO IS 21.36
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 100 100 100
JESD-30 code R-PDSO-G3 R-PBCC-N3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE CHIP CARRIER SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED 260 260
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING NO LEAD GULL WING GULL WING
Terminal location DUAL BOTTOM DUAL DUAL
Maximum time at peak reflow temperature 40 NOT SPECIFIED 40 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1

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