Rectifier Diode, 1 Phase, 1 Element, 670A, 1200V V(RRM), Silicon, DO-200AB,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | International Rectifier ( Infineon ) |
package instruction | O-CEDB-N2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
application | FAST RECOVERY |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.7 V |
JEDEC-95 code | DO-200AB |
JESD-30 code | O-CEDB-N2 |
Maximum non-repetitive peak forward current | 12500 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 2 |
Maximum operating temperature | 125 °C |
Maximum output current | 670 A |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | ROUND |
Package form | DISK BUTTON |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 1200 V |
Maximum reverse recovery time | 1.2 µs |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | END |
R38BF12A | R38BF10A | R38BF10B | R38BF12B | |
---|---|---|---|---|
Description | Rectifier Diode, 1 Phase, 1 Element, 670A, 1200V V(RRM), Silicon, DO-200AB, | Rectifier Diode, 1 Phase, 1 Element, 670A, 1000V V(RRM), Silicon, DO-200AB, | Rectifier Diode, 1 Phase, 1 Element, 670A, 1000V V(RRM), Silicon, DO-200AB, | Rectifier Diode, 1 Phase, 1 Element, 670A, 1200V V(RRM), Silicon, DO-200AB, |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
package instruction | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 |
Reach Compliance Code | unknown | unknown | unknown | unknow |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
application | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
JEDEC-95 code | DO-200AB | DO-200AB | DO-200AB | DO-200AB |
JESD-30 code | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 |
Maximum non-repetitive peak forward current | 12500 A | 12500 A | 12500 A | 12500 A |
Number of components | 1 | 1 | 1 | 1 |
Phase | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 |
Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C |
Maximum output current | 670 A | 670 A | 670 A | 670 A |
Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
Package shape | ROUND | ROUND | ROUND | ROUND |
Package form | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 1200 V | 1000 V | 1000 V | 1200 V |
Maximum reverse recovery time | 1.2 µs | 1.2 µs | 1.4 µs | 1.4 µs |
surface mount | YES | YES | YES | YES |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal location | END | END | END | END |