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R38BF10A

Description
Rectifier Diode, 1 Phase, 1 Element, 670A, 1000V V(RRM), Silicon, DO-200AB,
CategoryDiscrete semiconductor    diode   
File Size254KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

R38BF10A Overview

Rectifier Diode, 1 Phase, 1 Element, 670A, 1000V V(RRM), Silicon, DO-200AB,

R38BF10A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-CEDB-N2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeDO-200AB
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current12500 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current670 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time1.2 µs
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Base Number Matches1

R38BF10A Related Products

R38BF10A R38BF10B R38BF12A R38BF12B
Description Rectifier Diode, 1 Phase, 1 Element, 670A, 1000V V(RRM), Silicon, DO-200AB, Rectifier Diode, 1 Phase, 1 Element, 670A, 1000V V(RRM), Silicon, DO-200AB, Rectifier Diode, 1 Phase, 1 Element, 670A, 1200V V(RRM), Silicon, DO-200AB, Rectifier Diode, 1 Phase, 1 Element, 670A, 1200V V(RRM), Silicon, DO-200AB,
Is it Rohs certified? incompatible incompatible incompatible incompatible
package instruction O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Reach Compliance Code unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99
application FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.7 V 1.7 V 1.7 V 1.7 V
JEDEC-95 code DO-200AB DO-200AB DO-200AB DO-200AB
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Maximum non-repetitive peak forward current 12500 A 12500 A 12500 A 12500 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Maximum output current 670 A 670 A 670 A 670 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 1000 V 1200 V 1200 V
Maximum reverse recovery time 1.2 µs 1.4 µs 1.2 µs 1.4 µs
surface mount YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END END END END

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