Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, PLASTIC, VFBGA-90
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Micron Technology |
Parts packaging code | BGA |
package instruction | VFBGA, BGA90,9X15,32 |
Contacts | 90 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 5.5 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 166 MHz |
I/O type | COMMON |
interleaved burst length | 1,2,4,8 |
JESD-30 code | R-PBGA-B90 |
JESD-609 code | e0 |
length | 13 mm |
memory density | 134217728 bit |
Memory IC Type | SYNCHRONOUS DRAM |
memory width | 32 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 90 |
word count | 4194304 words |
character code | 4000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 4MX32 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | VFBGA |
Encapsulate equivalent code | BGA90,9X15,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | 235 |
power supply | 3.3 V |
Certification status | Not Qualified |
refresh cycle | 4096 |
Maximum seat height | 1 mm |
self refresh | YES |
Continuous burst length | 1,2,4,8,FP |
Maximum standby current | 0.002 A |
Maximum slew rate | 0.32 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 30 |
width | 8 mm |
MT48LC4M32B2F5-6 | MT48LC4M32B2P-7 | MT48LC4M32B2P-6 | MT48LC4M32B2F5-7 | MT48LC4M32B2B5-7 | MT48LC4M32B2TG-7 | MT48LC4M32B2B5-6 | |
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Description | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, PLASTIC, VFBGA-90 | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PDSO86, 0.40 INCH, LEAD FREE, PLASTIC, TSOP-86 | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PDSO86, 0.40 INCH, LEAD FREE, PLASTIC, TSOP-86 | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, PLASTIC, VFBGA-90 | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, LEAD FREE, PLASTIC, VFBGA-90 | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PDSO86, 0.40 INCH, PLASTIC, TSOP-86 | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, LEAD FREE, PLASTIC, VFBGA-90 |
Is it Rohs certified? | incompatible | conform to | conform to | incompatible | conform to | incompatible | conform to |
Parts packaging code | BGA | TSOP | TSOP | BGA | BGA | TSOP | BGA |
package instruction | VFBGA, BGA90,9X15,32 | TSSOP, TSSOP86,.46,20 | TSSOP, TSSOP86,.46,20 | VFBGA, BGA90,9X15,32 | VFBGA, BGA90,9X15,32 | TSSOP, TSSOP86,.46,20 | VFBGA, BGA90,9X15,32 |
Contacts | 90 | 86 | 86 | 90 | 90 | 86 | 90 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
access mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
Maximum access time | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns |
Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 166 MHz | 143 MHz | 166 MHz | 143 MHz | 143 MHz | 143 MHz | 166 MHz |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
interleaved burst length | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
JESD-30 code | R-PBGA-B90 | R-PDSO-G86 | R-PDSO-G86 | R-PBGA-B90 | R-PBGA-B90 | R-PDSO-G86 | R-PBGA-B90 |
JESD-609 code | e0 | e3 | e3 | e0 | e1 | e0 | e1 |
length | 13 mm | 22.22 mm | 22.22 mm | 13 mm | 13 mm | 22.22 mm | 13 mm |
memory density | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit |
Memory IC Type | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
memory width | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 90 | 86 | 86 | 90 | 90 | 86 | 90 |
word count | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
character code | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 4MX32 | 4MX32 | 4MX32 | 4MX32 | 4MX32 | 4MX32 | 4MX32 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | VFBGA | TSSOP | TSSOP | VFBGA | VFBGA | TSSOP | VFBGA |
Encapsulate equivalent code | BGA90,9X15,32 | TSSOP86,.46,20 | TSSOP86,.46,20 | BGA90,9X15,32 | BGA90,9X15,32 | TSSOP86,.46,20 | BGA90,9X15,32 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | 235 | 260 | 260 | 235 | 260 | 235 | 260 |
power supply | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 |
Maximum seat height | 1 mm | 1.2 mm | 1.2 mm | 1 mm | 1 mm | 1.2 mm | 1 mm |
self refresh | YES | YES | YES | YES | YES | YES | YES |
Continuous burst length | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
Maximum standby current | 0.002 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A |
Maximum slew rate | 0.32 mA | 0.32 mA | 0.32 mA | 0.32 mA | 0.32 mA | 0.32 mA | 0.32 mA |
Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
surface mount | YES | YES | YES | YES | YES | YES | YES |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Lead (Sn/Pb) | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal form | BALL | GULL WING | GULL WING | BALL | BALL | GULL WING | BALL |
Terminal pitch | 0.8 mm | 0.5 mm | 0.5 mm | 0.8 mm | 0.8 mm | 0.5 mm | 0.8 mm |
Terminal location | BOTTOM | DUAL | DUAL | BOTTOM | BOTTOM | DUAL | BOTTOM |
Maximum time at peak reflow temperature | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
width | 8 mm | 10.16 mm | 10.16 mm | 8 mm | 8 mm | 10.16 mm | 8 mm |
Is it lead-free? | Contains lead | Lead free | Lead free | Contains lead | - | Contains lead | - |
Maker | Micron Technology | Micron Technology | - | - | Micron Technology | Micron Technology | Micron Technology |