Power Bipolar Transistor, 10A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | conform to |
Maker | CDIL[Continental Device India Pvt. Ltd.] |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | compliant |
Shell connection | ISOLATED |
Maximum collector current (IC) | 10 A |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 500 |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 60 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
TIP141F | BU908F | CSC3280F | CSA1301RF | CSD1047F | |
---|---|---|---|---|---|
Description | Power Bipolar Transistor, 10A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, | Power Bipolar Transistor, 8A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 12A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 12A I(C), 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 12A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin |
Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to |
Maker | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] |
package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant |
Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
Maximum collector current (IC) | 10 A | 8 A | 12 A | 12 A | 12 A |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
Number of components | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | NPN | NPN | NPN | PNP | NPN |
Maximum power dissipation(Abs) | 60 W | 34 W | 90 W | 90 W | 90 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
Minimum DC current gain (hFE) | 500 | - | 28 | 28 | 20 |
JESD-609 code | - | e0 | e0 | e0 | e0 |
Nominal transition frequency (fT) | - | 7 MHz | 30 MHz | 30 MHz | 15 MHz |