Power Bipolar Transistor, 8A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | conform to |
| Maker | CDIL[Continental Device India Pvt. Ltd.] |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 8 A |
| Configuration | SINGLE |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 34 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 7 MHz |
| BU908F | CSC3280F | CSA1301RF | TIP141F | CSD1047F | |
|---|---|---|---|---|---|
| Description | Power Bipolar Transistor, 8A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 12A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 12A I(C), 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 10A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, | Power Bipolar Transistor, 12A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to |
| Maker | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Maximum collector current (IC) | 8 A | 12 A | 12 A | 10 A | 12 A |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | PNP | NPN | NPN |
| Maximum power dissipation(Abs) | 34 W | 90 W | 90 W | 60 W | 90 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| JESD-609 code | e0 | e0 | e0 | - | e0 |
| Nominal transition frequency (fT) | 7 MHz | 30 MHz | 30 MHz | - | 15 MHz |
| Minimum DC current gain (hFE) | - | 28 | 28 | 500 | 20 |
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