Late-Write SRAM, 2MX9, 1.6ns, CMOS, PBGA209
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | GSI Technology |
package instruction | BGA, BGA209,11X19,50 |
Reach Compliance Code | compliant |
Maximum access time | 1.6 ns |
Maximum clock frequency (fCLK) | 333 MHz |
I/O type | SEPARATE |
JESD-30 code | R-PBGA-B209 |
JESD-609 code | e0 |
memory density | 18874368 bit |
Memory IC Type | LATE-WRITE SRAM |
memory width | 9 |
Humidity sensitivity level | 3 |
Number of terminals | 209 |
word count | 2097152 words |
character code | 2000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 2MX9 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | BGA |
Encapsulate equivalent code | BGA209,11X19,50 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY |
Parallel/Serial | PARALLEL |
power supply | 1.5/1.8,1.8 V |
Certification status | Not Qualified |
Minimum standby current | 1.7 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | BALL |
Terminal pitch | 1.27 mm |
Terminal location | BOTTOM |
GS8180S09B-333 | GS8180S09B-275IT | GS8180S09B-250T | GS8180S09B-300I | GS8180S09B-300 | GS8180S09B-250 | |
---|---|---|---|---|---|---|
Description | Late-Write SRAM, 2MX9, 1.6ns, CMOS, PBGA209 | Late-Write SRAM, 2MX9, 1.9ns, CMOS, PBGA209 | Late-Write SRAM, 2MX9, 2.1ns, CMOS, PBGA209 | Late-Write SRAM, 2MX9, 1.8ns, CMOS, PBGA209 | Late-Write SRAM, 2MX9, 1.8ns, CMOS, PBGA209 | Late-Write SRAM, 2MX9, 2.1ns, CMOS, PBGA209 |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
Maker | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology |
package instruction | BGA, BGA209,11X19,50 | BGA, BGA209,11X19,50 | BGA, BGA209,11X19,50 | BGA, BGA209,11X19,50 | BGA, BGA209,11X19,50 | BGA, BGA209,11X19,50 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
Maximum access time | 1.6 ns | 1.9 ns | 2.1 ns | 1.8 ns | 1.8 ns | 2.1 ns |
Maximum clock frequency (fCLK) | 333 MHz | 275 MHz | 250 MHz | 300 MHz | 300 MHz | 250 MHz |
I/O type | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
JESD-30 code | R-PBGA-B209 | R-PBGA-B209 | R-PBGA-B209 | R-PBGA-B209 | R-PBGA-B209 | R-PBGA-B209 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
memory density | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit |
Memory IC Type | LATE-WRITE SRAM | LATE-WRITE SRAM | LATE-WRITE SRAM | LATE-WRITE SRAM | LATE-WRITE SRAM | LATE-WRITE SRAM |
memory width | 9 | 9 | 9 | 9 | 9 | 9 |
Humidity sensitivity level | 3 | 3 | 3 | 3 | 3 | 3 |
Number of terminals | 209 | 209 | 209 | 209 | 209 | 209 |
word count | 2097152 words | 2097152 words | 2097152 words | 2097152 words | 2097152 words | 2097152 words |
character code | 2000000 | 2000000 | 2000000 | 2000000 | 2000000 | 2000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 70 °C | 85 °C | 70 °C | 85 °C | 70 °C | 70 °C |
organize | 2MX9 | 2MX9 | 2MX9 | 2MX9 | 2MX9 | 2MX9 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | BGA | BGA | BGA | BGA | BGA | BGA |
Encapsulate equivalent code | BGA209,11X19,50 | BGA209,11X19,50 | BGA209,11X19,50 | BGA209,11X19,50 | BGA209,11X19,50 | BGA209,11X19,50 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
power supply | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Minimum standby current | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
surface mount | YES | YES | YES | YES | YES | YES |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | BALL | BALL | BALL | BALL | BALL | BALL |
Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |