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APT901R1BN-BUTT

Description
10.5A, 900V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
CategoryDiscrete semiconductor    The transistor   
File Size160KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

APT901R1BN-BUTT Overview

10.5A, 900V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

APT901R1BN-BUTT Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage900 V
Maximum drain current (ID)10.5 A
Maximum drain-source on-resistance1.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)160 pF
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment310 W
Maximum pulsed drain current (IDM)42 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Maximum off time (toff)143 ns
Maximum opening time (tons)62 ns
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