|
IRGTDN200K06 |
IRGRDN400K06 |
IRGNIN150K06 |
IRGTIN100K06 |
IRGRDN600K06 |
IRGDDN600K06 |
IRGTDN300K06 |
IRGKIN150K06 |
IRGKIN100K06 |
IRGNIN100K06 |
Description |
Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES, N-Channel, |
Insulated Gate Bipolar Transistor, 520A I(C), 600V V(BR)CES, N-Channel |
Insulated Gate Bipolar Transistor, 170A I(C), 600V V(BR)CES, N-Channel |
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, |
Insulated Gate Bipolar Transistor, 680A I(C), 600V V(BR)CES, N-Channel |
Insulated Gate Bipolar Transistor, 680A I(C), 600V V(BR)CES, N-Channel |
Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel, |
Insulated Gate Bipolar Transistor, 170A I(C), 600V V(BR)CES, N-Channel |
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel |
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel |
Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
Maker |
International Rectifier ( Infineon ) |
International Rectifier ( Infineon ) |
International Rectifier ( Infineon ) |
International Rectifier ( Infineon ) |
International Rectifier ( Infineon ) |
International Rectifier ( Infineon ) |
International Rectifier ( Infineon ) |
International Rectifier ( Infineon ) |
International Rectifier ( Infineon ) |
International Rectifier ( Infineon ) |
package instruction |
POST/STUD MOUNT, R-MUPM-X7 |
POST/STUD MOUNT, R-MUPM-X4 |
FLANGE MOUNT, R-PUFM-X7 |
POST/STUD MOUNT, R-MUPM-X7 |
POST/STUD MOUNT, R-MUPM-X4 |
POST/STUD MOUNT, R-MUPM-X4 |
POST/STUD MOUNT, R-MUPM-X7 |
FLANGE MOUNT, R-PUFM-X7 |
FLANGE MOUNT, R-PUFM-X7 |
FLANGE MOUNT, R-PUFM-X7 |
Reach Compliance Code |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
Other features |
LOW CONDUCTION LOSS |
LOW CONDUCTION LOSS |
CHOPPER SWITCH |
LOW CONDUCTION LOSS |
LOW CONDUCTION LOSS |
LOW CONDUCTION LOSS |
LOW CONDUCTION LOSS |
CHOPPER SWITCH |
CHOPPER SWITCH |
CHOPPER SWITCH |
Shell connection |
ISOLATED |
ISOLATED |
ISOLATED |
ISOLATED |
ISOLATED |
ISOLATED |
ISOLATED |
ISOLATED |
ISOLATED |
ISOLATED |
Maximum collector current (IC) |
260 A |
520 A |
170 A |
130 A |
680 A |
680 A |
340 A |
170 A |
130 A |
130 A |
Collector-emitter maximum voltage |
600 V |
600 V |
600 V |
600 V |
600 V |
600 V |
600 V |
600 V |
600 V |
600 V |
Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN CONFIGURABLE DIODE |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN CONFIGURABLE DIODE |
SINGLE WITH BUILT-IN CONFIGURABLE DIODE |
SINGLE WITH BUILT-IN CONFIGURABLE DIODE |
Gate emitter threshold voltage maximum |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
Gate-emitter maximum voltage |
20 V |
20 V |
20 V |
20 V |
20 V |
20 V |
20 V |
20 V |
20 V |
20 V |
JESD-30 code |
R-MUPM-X7 |
R-MUPM-X4 |
R-PUFM-X7 |
R-MUPM-X7 |
R-MUPM-X4 |
R-MUPM-X4 |
R-MUPM-X7 |
R-PUFM-X7 |
R-PUFM-X7 |
R-PUFM-X7 |
Number of components |
2 |
1 |
1 |
2 |
1 |
1 |
2 |
1 |
1 |
1 |
Number of terminals |
7 |
4 |
7 |
7 |
4 |
4 |
7 |
7 |
7 |
7 |
Maximum operating temperature |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
Package body material |
METAL |
METAL |
PLASTIC/EPOXY |
METAL |
METAL |
METAL |
METAL |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
POST/STUD MOUNT |
POST/STUD MOUNT |
FLANGE MOUNT |
POST/STUD MOUNT |
POST/STUD MOUNT |
POST/STUD MOUNT |
POST/STUD MOUNT |
FLANGE MOUNT |
FLANGE MOUNT |
FLANGE MOUNT |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
Maximum power consumption environment |
1000 W |
1984 W |
658 W |
500 W |
2604 W |
2604 W |
1316 W |
658 W |
500 W |
500 W |
Maximum power dissipation(Abs) |
1000 W |
1980 W |
658 W |
500 W |
2600 W |
2600 W |
1320 W |
658 W |
500 W |
500 W |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
surface mount |
NO |
NO |
NO |
NO |
NO |
NO |
NO |
NO |
NO |
NO |
Terminal form |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
Terminal location |
UPPER |
UPPER |
UPPER |
UPPER |
UPPER |
UPPER |
UPPER |
UPPER |
UPPER |
UPPER |
transistor applications |
MOTOR CONTROL |
MOTOR CONTROL |
MOTOR CONTROL |
MOTOR CONTROL |
MOTOR CONTROL |
MOTOR CONTROL |
MOTOR CONTROL |
MOTOR CONTROL |
MOTOR CONTROL |
MOTOR CONTROL |
Transistor component materials |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
VCEsat-Max |
2.7 V |
2.7 V |
2.7 V |
2.7 V |
2.7 V |
2.7 V |
2.7 V |
2.7 V |
2.7 V |
2.7 V |