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IRGTDN200K06

Description
Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size55KB,1 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRGTDN200K06 Overview

Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES, N-Channel,

IRGTDN200K06 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionPOST/STUD MOUNT, R-MUPM-X7
Reach Compliance Codeunknown
Other featuresLOW CONDUCTION LOSS
Shell connectionISOLATED
Maximum collector current (IC)260 A
Collector-emitter maximum voltage600 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum5.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-MUPM-X7
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formPOST/STUD MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment1000 W
Maximum power dissipation(Abs)1000 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
VCEsat-Max2.7 V

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Description Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 520A I(C), 600V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 170A I(C), 600V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 680A I(C), 600V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 680A I(C), 600V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 170A I(C), 600V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction POST/STUD MOUNT, R-MUPM-X7 POST/STUD MOUNT, R-MUPM-X4 FLANGE MOUNT, R-PUFM-X7 POST/STUD MOUNT, R-MUPM-X7 POST/STUD MOUNT, R-MUPM-X4 POST/STUD MOUNT, R-MUPM-X4 POST/STUD MOUNT, R-MUPM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
Other features LOW CONDUCTION LOSS LOW CONDUCTION LOSS CHOPPER SWITCH LOW CONDUCTION LOSS LOW CONDUCTION LOSS LOW CONDUCTION LOSS LOW CONDUCTION LOSS CHOPPER SWITCH CHOPPER SWITCH CHOPPER SWITCH
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 260 A 520 A 170 A 130 A 680 A 680 A 340 A 170 A 130 A 130 A
Collector-emitter maximum voltage 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN CONFIGURABLE DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE WITH BUILT-IN CONFIGURABLE DIODE SINGLE WITH BUILT-IN CONFIGURABLE DIODE SINGLE WITH BUILT-IN CONFIGURABLE DIODE
Gate emitter threshold voltage maximum 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Gate-emitter maximum voltage 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V
JESD-30 code R-MUPM-X7 R-MUPM-X4 R-PUFM-X7 R-MUPM-X7 R-MUPM-X4 R-MUPM-X4 R-MUPM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7
Number of components 2 1 1 2 1 1 2 1 1 1
Number of terminals 7 4 7 7 4 4 7 7 7 7
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material METAL METAL PLASTIC/EPOXY METAL METAL METAL METAL PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form POST/STUD MOUNT POST/STUD MOUNT FLANGE MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 1000 W 1984 W 658 W 500 W 2604 W 2604 W 1316 W 658 W 500 W 500 W
Maximum power dissipation(Abs) 1000 W 1980 W 658 W 500 W 2600 W 2600 W 1320 W 658 W 500 W 500 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER
transistor applications MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
VCEsat-Max 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
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