IRFM240DPBF datasheet, PDF - EEWORLD Datasheet

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IRFM240DPBF: DescriptionPower Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size236KB，7 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRFM240DPBF Overview

Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN

IRFM240DPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-254AA
package instruction	FLANGE MOUNT, S-MSFM-P3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	450 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	18 A
Maximum drain-source on-resistance	0.25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	125 W
Maximum pulsed drain current (IDM)	72 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	125 ns
Maximum opening time (tons)	172 ns

IRFM240DPBF Preview

PD - 90555E

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number

IRFM240

JANTX2N7219

JANTXV2N7219

REF:MIL-PRF-19500/596

200V, N-CHANNEL

HEXFET

MOSFET TECHNOLOGY

DS(on)

0.18

Ω

18A

HEXFET

MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state

resistance combined with high transconductance.

HEXFET

transistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as

switching power supplies, motor controls, inverters,

choppers, audio amplifiers, high energy pulse circuits, and

virtually any application where high reliability is required.

The

HEXFET

transistor’s totally isolated package eliminates

the need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-254AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C

ID @ VGS = 10V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical)

125

1.0

±20

450

12.5

5.0

-55 to 150

Units

W/°C

V/ns

www.irf.com

04/20/07

IRFM240

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

BVDSS

Drain-to-Source Breakdown Voltage

∆BV

DSS /∆T J Temperature Coefficient of Breakdown

Voltage

RDS(on)

Static Drain-to-Source On-State

Resistance

VGS(th)

Gate Threshold Voltage

g fs

Forward Transconductance

IDSS

Zero Gate Voltage Drain Current

Min

200

—

2.0

6.1

—

Typ Max Units

—

0.29

—

4.0

—

0.18

0.25

4.0

—

250

100

-100

14.6

37.6

105

—

V/°C

Ω

µA

Test Conditions

VGS = 0V, ID = 1.0mA

Reference to 25°C, ID = 1.0mA

VGS = 10V, ID = 11A

VGS = 10V, ID = 18A

VDS = VGS, ID = 250µA

VDS > 15V, IDS = 11A

VDS= 160V ,VGS=0V

VDS = 160V,

VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

VGS =10V, ID = 18A

VDS = 100V

VDD = 100V, ID = 18A,

VGS =10V, RG = 9.1Ω

IGSS

Q gs

Q gd

(on)

(off)

LS + LD

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

Measured from drain lead (6mm/

0.25in. from package) to source

lead (6mm/0.25in. from package)

VGS = 0V, VDS = 25V

f = 1.0MHz

Ciss

C oss

C rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

1300

400

130

—

Source-Drain Diode Ratings and Characteristics

Parameter

ISM

VSD

trr

Q RR

ton

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

Min Typ Max Units

—

1.5

500

5.3

Test Conditions

µC

= 25°C, IS = 18A, VGS = 0V

Tj = 25°C, IF = 18A, di/dt

≤

100A/µs

VDD

≤

50V

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

RthJC

RthJS

RthJA

Junction-to-Case

Case-to-sink

Junction-to-Ambient

Min Typ Max

—

0.21

—

1.0

—

Units

°C/W

Test Conditions

Typical socket mount

Note: Corresponding Spice and Saber models are available on the International Rectifier Website.

For footnotes refer to the last page

www.irf.com

IRFM240

Fig 1.

Typical Output Characteristics

Fig 2.

Typical Output Characteristics

Fig 3.

Typical Transfer Characteristics

Fig 4.

Normalized On-Resistance

Vs. Temperature

www.irf.com

IRFM240

13a & b

Fig 5.

Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6.

Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 7.

Typical Source-Drain Diode

Forward Voltage

Fig 8.

Maximum Safe Operating Area

www.irf.com

IRFM240

Pulse Width

≤ 1

µs

Duty Factor

≤ 0.1 %

D.U.T.

Fig 10a.

Switching Time Test Circuit

90%

Fig 9.

Maximum Drain Current Vs.

Case Temperature

10%

d(on)

d(off)

Fig 10b.

Switching Time Waveforms

Fig 11.

Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

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IRFM240DPBF Related Products

	IRFM240DPBF	IRFM240PBF	IRFM240UPBF
Description	Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN	Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN	Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-254AA	TO-254AA	TO-254AA
package instruction	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	450 mJ	450 mJ	450 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V
Maximum drain current (ID)	18 A	18 A	18 A
Maximum drain-source on-resistance	0.25 Ω	0.25 Ω	0.25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA	TO-254AA	TO-254AA
JESD-30 code	S-MSFM-P3	R-MSFM-P3	S-MSFM-P3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	SQUARE	RECTANGULAR	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	125 W	125 W	125 W
Maximum pulsed drain current (IDM)	72 A	72 A	72 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maximum off time (toff)	125 ns	125 ns	125 ns
Maximum opening time (tons)	172 ns	172 ns	172 ns

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