Power Bipolar Transistor, 6A I(C), 280V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-82, 2 PIN
Parameter Name | Attribute value |
Maker | API Technologies |
Parts packaging code | TO-82 |
package instruction | TO-82, 2 PIN |
Contacts | 2 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 6 A |
Collector-emitter maximum voltage | 280 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 18 |
JESD-30 code | O-MBPM-D2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 140 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Polarity/channel type | NPN |
Maximum power consumption environment | 100 W |
Maximum power dissipation(Abs) | 100 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | SOLDER LUG |
Terminal location | BOTTOM |
Transistor component materials | SILICON |
VCEsat-Max | 1.25 V |