IXFX80N20Q datasheet, PDF - EEWORLD Datasheet

IXFX80N20Q: DescriptionPower Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3; CategoryDiscrete semiconductor The transistor; File Size48KB，2 Pages; ManufacturerLittelfuse; Websitehttp://www.littelfuse.com; Environmental Compliance

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IXFX80N20Q Overview

Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	1500 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	80 A
Maximum drain-source on-resistance	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	320 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	IXFX80N20Q
Description	Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3
Is it Rohs certified?	conform to
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	1500 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	80 A
Maximum drain-source on-resistance	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	320 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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