BULD128DB-1 datasheet, PDF - EEWORLD Datasheet

BULD128DB-1: Description4A, 400V, NPN, Si, POWER TRANSISTOR, TO-251; CategoryDiscrete semiconductor The transistor; File Size108KB，7 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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BULD128DB-1 Overview

4A, 400V, NPN, Si, POWER TRANSISTOR, TO-251

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Reach Compliance Code	compliant
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	400 V
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	8
JEDEC-95 code	TO-251
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Maximum power consumption environment	35 W
Maximum power dissipation(Abs)	35 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	1.5 V

	BULD128DB-1	BULD128DA-1
Description	4A, 400V, NPN, Si, POWER TRANSISTOR, TO-251	4A, 400V, NPN, Si, POWER TRANSISTOR, TO-251
Is it Rohs certified?	incompatible	incompatible
Maker	STMicroelectronics	STMicroelectronics
Reach Compliance Code	compliant	compliant
Maximum collector current (IC)	4 A	4 A
Collector-emitter maximum voltage	400 V	400 V
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	8	8
JEDEC-95 code	TO-251	TO-251
JESD-30 code	R-PSIP-T3	R-PSIP-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Polarity/channel type	NPN	NPN
Maximum power consumption environment	35 W	35 W
Maximum power dissipation(Abs)	35 W	35 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
VCEsat-Max	1.5 V	1.5 V

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