4A, 400V, NPN, Si, POWER TRANSISTOR, TO-251
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | STMicroelectronics |
| Reach Compliance Code | compliant |
| Maximum collector current (IC) | 4 A |
| Collector-emitter maximum voltage | 400 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum DC current gain (hFE) | 8 |
| JEDEC-95 code | TO-251 |
| JESD-30 code | R-PSIP-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 35 W |
| Maximum power dissipation(Abs) | 35 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| VCEsat-Max | 1.5 V |
| BULD128DA-1 | BULD128DB-1 | |
|---|---|---|
| Description | 4A, 400V, NPN, Si, POWER TRANSISTOR, TO-251 | 4A, 400V, NPN, Si, POWER TRANSISTOR, TO-251 |
| Is it Rohs certified? | incompatible | incompatible |
| Maker | STMicroelectronics | STMicroelectronics |
| Reach Compliance Code | compliant | compliant |
| Maximum collector current (IC) | 4 A | 4 A |
| Collector-emitter maximum voltage | 400 V | 400 V |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum DC current gain (hFE) | 8 | 8 |
| JEDEC-95 code | TO-251 | TO-251 |
| JESD-30 code | R-PSIP-T3 | R-PSIP-T3 |
| JESD-609 code | e0 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE |
| Polarity/channel type | NPN | NPN |
| Maximum power consumption environment | 35 W | 35 W |
| Maximum power dissipation(Abs) | 35 W | 35 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| VCEsat-Max | 1.5 V | 1.5 V |
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