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MMBZ10VAL

Description
40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB
Categorysemiconductor    Discrete semiconductor   
File Size94KB,5 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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MMBZ10VAL Overview

40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB

MMBZ10VAL Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Maximum breakdown voltage15.75 V
Minimum breakdown voltage14.25 V
Processing package descriptionPLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipAVALANCHE
structureCOMMON ANODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.3600 W
polarityunidirectional
Diode typeTRANS voltage SUPPRESSOR diode
shutdown voltage12 V
Maximum non-repetitive peak speed power40 W
MMBZ5V6AL - MMBZ33VAL
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
Features
Dual TVS in Common Anode Configuration
24W/40W Peak Power Dissipation Rating @ 1.0ms
(Unidirectional)
225 mW Power Dissipation
Ideally Suited for Automated Insertion
Low Leakage
Lead, Halogen, and Antimony Free/RoHS Compliant (Note 5)
"Green" Device (Note 6)
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic “Green” Molding Compound.
UL Flammability Classification 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
ESD Rating Exceeding 16kV per the Human Body Model (Note 4)
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
Top View
Device Schematic
Maximum Ratings
Peak Power Dissipation
Peak Power Dissipation
@T
A
= 25°C unless otherwise specified
Characteristic
MMBZ5V6AL - MMBZ10VAL
MMBZ15VAL - MMBZ33VAL
(Note 2)
(Note 2)
Symbol
P
pk
P
pk
Value
24
40
Unit
W
W
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
(Note 1)
(Note 1)
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
225
556
–65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
24 Watt (V
F
= 0.9V max @ I
F
= 10mA)
Type
Number
MMBZ5V6AL
Marking
Code
K9A
V
RWM
Volts
3
I
R
@
V
RWM
(Note 3)
μA
5.0
Breakdown Voltage
V
BR
(Note 3) (V)
Min
5.32
Nom
5.6
Max
5.88
@ I
T
mA
20
V
C
@ I
PP
(Note 2)
V
C
V
8.0
I
PP
A
3.0
Typical
Temperature
Coefficient
TC (mV/°C)
1.8
24 Watt (V
F
= 0.9V max @ I
F
= 10mA)
Type
Number
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
Notes:
Marking
Code
K9B
K9C
K9D
K9E
V
RWM
Volts
3.0
4.5
6.0
6.5
I
R
@
V
RWM
(Note 3)
μA
0.5
0.5
0.3
0.3
Breakdown Voltage
V
BR
(Note 3) (V)
Min
5.89
6.46
8.65
9.50
Nom
6.2
6.8
9.1
10
Max
6.51
7.14
9.56
10.5
@ I
T
mA
1.0
1.0
1.0
1.0
V
C
@ I
PP
(Note 2)
V
C
V
8.7
9.6
14
14.2
I
PP
A
2.76
2.5
1.7
1.7
Typical
Temperature
Coefficient
TC (%/°C)
+0.04
+0.045
+0.065
+0.065
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Non-repetitive current pulse per Figure 2 and derate above T
A
= 25°C per Figure 1.
3. Short duration pulse test used to minimize self-heating effect.
4. MMBZ5V6AL and MMBZ15VAL exceed 16kV ESD rating, all other voltages exceed 8kV ESD rating.
5. No purposefully added lead. Halogen and Antimony Free.
6. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured
prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
MMBZ5V6AL - MMBZ33VAL
Document number: DS30306 Rev. 13 - 2
1 of 5
www.diodes.com
February 2010
© Diodes Incorporated

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Description 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB
Number of terminals 3 3 3 3 3 3 3 3 3 3
Number of components 2 2 2 2 2 2 2 2 2 2
Maximum breakdown voltage 15.75 V 15.75 V 15.75 V 34.65 V 28.35 V 15.75 V 15.75 V 15.75 V 15.75 V 15.75 V
Minimum breakdown voltage 14.25 V 14.25 V 14.25 V 31.35 V 25.65 V 14.25 V 14.25 V 14.25 V 14.25 V 14.25 V
Processing package description PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
EU RoHS regulations Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
China RoHS regulations Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE Active ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape Rectangle Rectangle Rectangle RECTANGULAR RECTANGULAR Rectangle Rectangle Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes YES Yes Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
terminal coating tin tin tin TIN TIN tin tin tin tin tin
Terminal location pair pair pair DUAL DUAL pair pair pair pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
Craftsmanship AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
structure COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials silicon silicon silicon SILICON SILICON silicon silicon silicon silicon silicon
polarity unidirectional unidirectional unidirectional UNIDIRECTIONAL UNIDIRECTIONAL unidirectional unidirectional unidirectional unidirectional unidirectional
Diode type TRANS voltage SUPPRESSOR diode TRANS voltage SUPPRESSOR diode TRANS voltage SUPPRESSOR diode TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS voltage SUPPRESSOR diode TRANS voltage SUPPRESSOR diode TRANS voltage SUPPRESSOR diode TRANS voltage SUPPRESSOR diode TRANS voltage SUPPRESSOR diode
Maximum non-repetitive peak speed power 40 W 40 W 40 W 40 W 40 W 40 W 40 W 40 W 40 W 40 W
Lead-free Yes Yes Yes Yes - Yes Yes Yes Yes Yes
Maximum power consumption limit 0.3600 W 0.3600 W 0.3600 W 0.3600 W - 0.3600 W 0.3600 W 0.3600 W 0.3600 W 0.3600 W
shutdown voltage 12 V 12 V 12 V 26 V - 12 V 12 V 12 V 12 V 12 V
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