Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | Central Semiconductor |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 0.6 A |
Collector-based maximum capacity | 6 pF |
Collector-emitter maximum voltage | 150 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 60 |
JESD-30 code | R-PDSO-G4 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 4 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | PNP |
Maximum power dissipation(Abs) | 0.002 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Matte Tin (Sn) |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 10 |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 100 MHz |
VCEsat-Max | 0.5 V |
CZT5401BKLEADFREE | CZT5401BK | CZT5401TR | CZT5401TRLEADFREE | CZT5401TR13LEADFREE | CZT5401TR13 | |
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Description | Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, |
Is it lead-free? | Lead free | Contains lead | Contains lead | Lead free | Lead free | Contains lead |
Is it Rohs certified? | conform to | incompatible | incompatible | conform to | conform to | incompatible |
Maker | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Reach Compliance Code | compliant | not_compliant | unknown | compliant | compliant | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
Maximum collector current (IC) | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.6 A |
Collector-based maximum capacity | 6 pF | 6 pF | 6 pF | 6 pF | 6 pF | 6 pF |
Collector-emitter maximum voltage | 150 V | 150 V | 150 V | 150 V | 150 V | 150 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 60 | 60 | 60 | 60 | 60 | 60 |
JESD-30 code | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
JESD-609 code | e3 | e0 | e0 | e3 | e3 | e0 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 4 | 4 | 4 | 4 | 4 | 4 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 | NOT SPECIFIED | NOT SPECIFIED | 260 | 260 | NOT SPECIFIED |
Polarity/channel type | PNP | PNP | PNP | PNP | PNP | PNP |
Maximum power dissipation(Abs) | 0.002 W | 2 W | 2 W | 0.002 W | 0.002 W | 2 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | YES | YES | YES | YES |
Terminal surface | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
Maximum time at peak reflow temperature | 10 | NOT SPECIFIED | NOT SPECIFIED | 10 | 10 | NOT SPECIFIED |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
VCEsat-Max | 0.5 V | 0.5 V | 0.5 V | 0.5 V | 0.5 V | 0.5 V |