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CZT5401BKLEADFREE

Description
Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size34KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
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CZT5401BKLEADFREE Overview

Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,

CZT5401BKLEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCentral Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.6 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.002 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.5 V

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Description Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
Is it lead-free? Lead free Contains lead Contains lead Lead free Lead free Contains lead
Is it Rohs certified? conform to incompatible incompatible conform to conform to incompatible
Maker Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
Reach Compliance Code compliant not_compliant unknown compliant compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A
Collector-based maximum capacity 6 pF 6 pF 6 pF 6 pF 6 pF 6 pF
Collector-emitter maximum voltage 150 V 150 V 150 V 150 V 150 V 150 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 60 60 60 60 60 60
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e0 e0 e3 e3 e0
Number of components 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED NOT SPECIFIED 260 260 NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.002 W 2 W 2 W 0.002 W 0.002 W 2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 NOT SPECIFIED NOT SPECIFIED 10 10 NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V

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