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AG6B

Description
Silicon Rectifier Cells with polysiloxan passivation
CategoryDiscrete semiconductor    diode   
File Size84KB,2 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric Compare View All

AG6B Overview

Silicon Rectifier Cells with polysiloxan passivation

AG6B Parametric

Parameter NameAttribute value
MakerSEMIKRON
Reach Compliance Codeunknow
applicationGENERAL PURPOSE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum non-repetitive peak forward current400 A
Phase1
Maximum output current6 A
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V

AG6B Related Products

AG6B AG6K AG6M AG6A AG6D AG6G AG6J
Description Silicon Rectifier Cells with polysiloxan passivation Silicon Rectifier Cells with polysiloxan passivation Silicon Rectifier Cells with polysiloxan passivation Silicon Rectifier Cells with polysiloxan passivation Silicon Rectifier Cells with polysiloxan passivation Silicon Rectifier Cells with polysiloxan passivation Silicon Rectifier Cells with polysiloxan passivation
Maker SEMIKRON SEMIKRON SEMIKRON SEMIKRON SEMIKRON SEMIKRON SEMIKRON
Reach Compliance Code unknow unknow unknow unknow unknow unknown unknow
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum non-repetitive peak forward current 400 A 400 A 400 A 400 A 400 A 400 A 400 A
Phase 1 1 1 1 1 1 1
Maximum output current 6 A 6 A 6 A 6 A 6 A 6 A 6 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V 800 V 1000 V 50 V 200 V 400 V 600 V

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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