Silicon Rectifier Cells with polysiloxan passivation
Parameter Name | Attribute value |
Maker | SEMIKRON |
Reach Compliance Code | unknow |
application | GENERAL PURPOSE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum non-repetitive peak forward current | 400 A |
Phase | 1 |
Maximum output current | 6 A |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 200 V |
AG6D | AG6K | AG6M | AG6A | AG6B | AG6G | AG6J | |
---|---|---|---|---|---|---|---|
Description | Silicon Rectifier Cells with polysiloxan passivation | Silicon Rectifier Cells with polysiloxan passivation | Silicon Rectifier Cells with polysiloxan passivation | Silicon Rectifier Cells with polysiloxan passivation | Silicon Rectifier Cells with polysiloxan passivation | Silicon Rectifier Cells with polysiloxan passivation | Silicon Rectifier Cells with polysiloxan passivation |
Maker | SEMIKRON | SEMIKRON | SEMIKRON | SEMIKRON | SEMIKRON | SEMIKRON | SEMIKRON |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknown | unknow |
application | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum non-repetitive peak forward current | 400 A | 400 A | 400 A | 400 A | 400 A | 400 A | 400 A |
Phase | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Maximum output current | 6 A | 6 A | 6 A | 6 A | 6 A | 6 A | 6 A |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 200 V | 800 V | 1000 V | 50 V | 100 V | 400 V | 600 V |