TK2222ATTD03 datasheet, PDF - EEWORLD Datasheet

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TK2222ATTD03: DescriptionNPN transistor; CategoryDiscrete semiconductor; File Size2MB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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TK2222ATTD03 Overview

NPN transistor

Features

Product Name: NPN Transistor

Product model: TK2222ATTD03

Product parameters:

Pcm (maximum dissipated power): 150mW

Ic (collector current): 600mA

BVcbo (Collector-Base Breakdown Voltage): 75V

BVceo (Collector-Emitter Breakdown Voltage): 40V

BVebo (emitter-base breakdown voltage): 6V

hFE (current gain): Min: 100, Max: 400

VCE (sat) saturation voltage drop: 1V

fT (transition frequency): 300MHz

Package: WBFBP-03A

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

WBFBP-03A Plastic-Encapsulate Transistors

TK2222ATTD03

TRANSISTOR

C

WBFBP-03A

(1.6×1.6×0.5)

unit: mm

DESCRIPTION

NPN Epitaxial planar Silicon Transistor

FEATURES

Complementary PNP Type available (TK2907ATTD03)

PPLICATION

general purpose amplifier, switching.

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM, Note book PC, etc.)

MARKING:1P

C

TOP

B

1. BASE

2. EMITTER

3. COLLECTOR

E

C

BACK

E

B

1P

B E

MAXIMUM RATINGS

(T

a

=25

℃

unless otherwise noted)

Symbol

Parameter

Value

Unit

V

CBO

Collector-Base Voltage

75

V

CEO

40

V

Collector-Emitter Voltage

V

EBO

6

V

Emitter-Base Voltage

I

C

Collector Current -Continuous

600

mA

P

C

Collector Dissipation

150

mW

T

J

Junction Temperature

150

℃

T

stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEX

I

EBO

h

FE(1)

h

FE(2)

DC current gain

h

FE(3)

h

FE(4)

h

FE(5)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise figure

V

CE(sat)

V

BE(sat)

f

T

C

ob

NF

Test conditions

I

C

= 10μA,I

E

=0

I

C

= 10mA, I

B

=0

I

E

=10μA,I

C

=0

V

CB

=70 V,I

E

=0

V

CE

=60V,V

BE(off)

=3V

V

EB

= 3V,I

C

=0

V

CE

=10V,I

C

= 0.1mA

V

CE

=10V,I

C

= 1mA

V

CE

=10V,I

C

= 10mA

V

CE

=10V,I

C

= 150mA

V

CE

=10V,I

C

= 500mA

I

C

=500mA,I

B

= 50mA

I

C

=150mA,I

B

=15mA

I

C

=500mA,I

B

= 50mA

I

C

=150mA,I

B

=15mA

V

CE

=20V, I

C

= 20mA

f=100MHz

V

CB

=10V, I

E

=0, f=1MHz

V

CB

=10V,I

c

=0.1mA,

f=1KHz,Rs=1KΩ

35

50

75

100

40

1

0.3

2

1.2

300

8

4

V

MHz

pF

dB

400

Min

75

40

6

0.1

Typ

Max

Unit

V

μA

A,May,2011

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